Improving the response of 2D COFs to the surface doping strategies through rational design of their chemical structure

IF 6.8 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Science China Materials Pub Date : 2024-08-09 DOI:10.1007/s40843-024-3032-7
Xin Feng  (, ), Xuefeng Liang  (, ), Xinxia Li  (, ), Zhou Fang  (, ), Weiqiang Wei  (, ), Lisheng Zhang  (, ), Yan He  (, ), Huifang Li  (, )
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Abstract

The chemical structure of covalent organic frameworks (COFs) plays a key role in their response to the surface doping strategy used for tuning their electronic character, but it is still not fully understood. To explore a rational design proposal for their chemical structure, the electronic properties of three n-doped typical COFs, including boron-containing (COF-1), triazine-based (CTF), and C–C bond-linked (GCOF) COFs, were investigated theoretically in this work. As expected, the chemical doping effects are different for these COFs. The dispersion of the frontier bands, the nuclear-independent chemical shift (NICS) aromaticity index results, distribution of the electron localization function (ELF), and Hirshfeld charge population plots show that part of the transferred electron from dopants will be offset by the intralayer charge transfer of COFs. Thus, chemical doping effects are more significant if the electron distribution in the COFs is more localized. This means the response of COFs to the surface doping strategy should be dominated by the conjugation degree of their chemical structure. Our results prove that the intrinsic conjugation degree of COFs plays a key role in such doping functionalization strategies, which are expected to provide more useful information for the initial structure design of COF materials and facilitate their practical applications as active electronic transport materials in nanoscale devices.

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通过合理设计化学结构改善二维 COF 对表面掺杂策略的响应
共价有机框架(COFs)的化学结构在其对用于调整其电子特性的表面掺杂策略的响应中起着关键作用,但人们对其化学结构的了解仍不全面。为了探索合理的化学结构设计方案,本研究从理论上研究了三种 n 掺杂典型 COF 的电子特性,包括含硼 COF-1、基于三嗪的 COF(CTF)和 C-C 键连接的 COF(GCOF)。不出所料,这些 COF 的化学掺杂效应各不相同。前沿带的色散、核无关化学位移(NICS)芳香指数结果、电子局域函数(ELF)分布和 Hirshfeld 电荷群图表明,掺杂剂转移的部分电子将被 COF 的层内电荷转移所抵消。因此,如果 COF 中的电子分布更加局部化,化学掺杂效应就会更加显著。这意味着 COF 对表面掺杂策略的反应应受其化学结构共轭度的影响。我们的研究结果证明,COFs 的内在共轭度在这种掺杂功能化策略中起着关键作用,有望为 COF 材料的初始结构设计提供更多有用信息,并促进其作为有源电子传输材料在纳米器件中的实际应用。
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来源期刊
Science China Materials
Science China Materials Materials Science-General Materials Science
CiteScore
11.40
自引率
7.40%
发文量
949
期刊介绍: Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.
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