Residual Stresses at the Interface between Carrier Tape and YSZ Layer in Manufacture of 2G HTS Wires

IF 1.1 4区 物理与天体物理 Q4 PHYSICS, APPLIED Technical Physics Pub Date : 2024-09-02 DOI:10.1134/s1063784224010183
A. V. Irodova, E. A. Golovkova, O. A. Kondratiev, V. S. Kruglov, V. E. Krylov, S. A. Tikhomirov, S. V. Shavkin
{"title":"Residual Stresses at the Interface between Carrier Tape and YSZ Layer in Manufacture of 2G HTS Wires","authors":"A. V. Irodova, E. A. Golovkova, O. A. Kondratiev, V. S. Kruglov, V. E. Krylov, S. A. Tikhomirov, S. V. Shavkin","doi":"10.1134/s1063784224010183","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Using X-ray diffraction, there were determined the residual stresses on the surface of the AISI 310S stainless steel carrier tape used in manufacture of the second generation high temperature superconducting (2G HTS) wires at the National Research Center “Kurchatov Institute,” from delivery to deposition of the main buffer layer YSZ between the tape and the superconducting layer, and the residual stress in the buffer layer YSZ itself. The compressive stress of –0<i>.</i>8 GPa induced by rolling was found on the surface of the tape as-delivered. During processing, it varies from –0<i>.</i>5 to –1<i>.</i>1 GPa. At each stage, its depth distribution was found down to 10 μm, and the residual stresses caused by processing were determined. The residual stress in the YSZ layer deposited using the ABAD technology is compressive and amounts to –3<i>.</i>29 GPa. The layer has a defective single-crystal structure in type to radiation swelling with the unstressed lattice period of 5.1820 Å, 0.9% larger than in ordinary crystal. The results obtained are in agreement with the data of the earlier neutron diffraction study of residual stresses inside the carrier tape.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":null,"pages":null},"PeriodicalIF":1.1000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063784224010183","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

Abstract

Using X-ray diffraction, there were determined the residual stresses on the surface of the AISI 310S stainless steel carrier tape used in manufacture of the second generation high temperature superconducting (2G HTS) wires at the National Research Center “Kurchatov Institute,” from delivery to deposition of the main buffer layer YSZ between the tape and the superconducting layer, and the residual stress in the buffer layer YSZ itself. The compressive stress of –0.8 GPa induced by rolling was found on the surface of the tape as-delivered. During processing, it varies from –0.5 to –1.1 GPa. At each stage, its depth distribution was found down to 10 μm, and the residual stresses caused by processing were determined. The residual stress in the YSZ layer deposited using the ABAD technology is compressive and amounts to –3.29 GPa. The layer has a defective single-crystal structure in type to radiation swelling with the unstressed lattice period of 5.1820 Å, 0.9% larger than in ordinary crystal. The results obtained are in agreement with the data of the earlier neutron diffraction study of residual stresses inside the carrier tape.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
制造 2G HTS 导线时载体带和 YSZ 层界面的残余应力
摘要 利用 X 射线衍射法测定了 "库尔恰托夫研究所 "国家研究中心用于制造第二代高温超导(2G HTS)导线的 AISI 310S 不锈钢载带从交付到载带和超导层之间的主缓冲层 YSZ 沉积期间的表面残余应力,以及缓冲层 YSZ 本身的残余应力。在交货时的磁带表面发现了由轧制引起的-0.8 GPa的压应力。在加工过程中,压应力在 -0.5 至 -1.1 GPa 之间变化。在每个阶段,其深度分布最小为 10 μm,并确定了加工过程中产生的残余应力。使用 ABAD 技术沉积的 YSZ 层的残余应力为压缩应力,达到 -3.29 GPa。该层具有辐射膨胀型缺陷单晶结构,非应力晶格周期为 5.1820 Å,比普通晶体大 0.9%。所得结果与早先对载体带内部残余应力进行的中子衍射研究数据一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Technical Physics
Technical Physics 物理-物理:应用
CiteScore
1.30
自引率
14.30%
发文量
139
审稿时长
3-6 weeks
期刊介绍: Technical Physics is a journal that contains practical information on all aspects of applied physics, especially instrumentation and measurement techniques. Particular emphasis is put on plasma physics and related fields such as studies of charged particles in electromagnetic fields, synchrotron radiation, electron and ion beams, gas lasers and discharges. Other journal topics are the properties of condensed matter, including semiconductors, superconductors, gases, liquids, and different materials.
期刊最新文献
Modeling of Throbbing Invasive and Epidemic Processes Based on Biophysical Adaptation Hybrid Structures On the Destruction of Elastic Polymer Materials under the Action of an Electron Beam Radiation Hardness of Subterahertz Radiation Source Based on Heterodyne on Gunn Diode Generator and Superlattice Multiplier Evolution of Structure of AlCoCrFeNi High-Entropy Alloy on Irradiation by Pulsed Electron Beam Shock-Wave Polymorphic Transition in Porous Graphite
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1