{"title":"Ion-Beam Lithography: Modelling and Analytical Description of the Deposited in Resist Energy","authors":"Ya. L. Shabelnikova, S. I. Zaitsev","doi":"10.1134/s1063784224010353","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The energy deposited in resist during its exposure by ion beam was simulated for ions from a set of rare gases and for gallium. It was shown that the distribution of energy density can be approximated by the product of two Gaussian functions. One of them describes the lateral distribution of energy, the second the dependence on depth. The widths and centres of these Gaussian functions are determined by the energy length (also mentioned in the literature as “Range” or “mean length of trajectories”), the mass of ions and the average atomic number of resist. The obtained description would make it possible to estimate the size of the resist modified volume for any type of ion with energy of tens kiloelectronvolts. So it can be used for a priori estimates of resolution and performance, as well as for the choice of beam energy and ion type based on this.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":null,"pages":null},"PeriodicalIF":1.1000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063784224010353","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
The energy deposited in resist during its exposure by ion beam was simulated for ions from a set of rare gases and for gallium. It was shown that the distribution of energy density can be approximated by the product of two Gaussian functions. One of them describes the lateral distribution of energy, the second the dependence on depth. The widths and centres of these Gaussian functions are determined by the energy length (also mentioned in the literature as “Range” or “mean length of trajectories”), the mass of ions and the average atomic number of resist. The obtained description would make it possible to estimate the size of the resist modified volume for any type of ion with energy of tens kiloelectronvolts. So it can be used for a priori estimates of resolution and performance, as well as for the choice of beam energy and ion type based on this.
期刊介绍：
Technical Physics is a journal that contains practical information on all aspects of applied physics, especially instrumentation and measurement techniques. Particular emphasis is put on plasma physics and related fields such as studies of charged particles in electromagnetic fields, synchrotron radiation, electron and ion beams, gas lasers and discharges. Other journal topics are the properties of condensed matter, including semiconductors, superconductors, gases, liquids, and different materials.
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