Synthesis and Analysis of SiBCN Films Obtained by Plasma-Enhanced Chemical Vapor Deposition from Triethylaminoborane, Hexamethyldisilazane, and Ammonia

Abstract

SiBCN films are synthesized by plasma-enhanced chemical vapor deposition at a reduced pressure and 500-600 °C. Organoelement silicon and boron compounds are selected as precursors, namely, hexamethyldisilazane HN(SiMe₃)₂ and triethylaminoborane Et₃N·BH₃ that were not used previously in the synthesis of SiBCN films. Vapor flows of initial compounds and additional gas (ammonia) were separately supplied to the reactor without premixing. The chemical bonding structure, elemental composition, surface morphology, and film deposition rate are studied by FTIR, XPS, wave dispersive X-ray spectroscopy, SEM, and Raman spectroscopy techniques. The surface morphology analysis of the samples shows that the films are smooth, homogeneous, and uniform without features. Variation of precursor concentrations in the initial mixture allows changes in the film composition in a wide range. The boron concentration in four-component coatings reaches 45 at.%. The study of chemical bonding structures of the films reveals the occurrence of Si–C, Si–N, B–N, C–H bonds along with the hybrid BC_nN_3–n bond.