Design and investigation of gaussian doped junction free SMDG and TMDG-TFET for analog/RF applications

Abstract

This research investigates four variants of Gaussian Doped (GD) Double Gate Single Material and Tri-Material Junction-Free Tunnel-Field-Effect-Transistors (GD-DG-JF-TFETs) to optimize their performance in analog and RF applications. The analysis is conducted using the Sentaurus Synopsis TCAD simulation tool, reveals a Subthreshold Swing (SS) as low as 38 mV/dec, exceptionally higher cut-off-frequency (ft) and maximum-oscillation-frequency ( ) of 516 GHz and 895 GHz, respectively. The proposed TMDG-JF-TFET enhances band-to-band tunneling between the drain and source regions, resulting in an extremely low-off-state-current (Ioff) of 9.6 fA and large-on-state current (ION) of 6.7 mA in Permittivity of high-k (HfO2 = 25) and low-k (SiO2 = 3.8) based structures.Compared to conventional SMDG technologies, the TMDG structures exhibits 36% reduction in SS, a 16% improvement in ft, an 18% enhancement in and 17% increase in ION. These improvements demonstrate that TMDG-based TFETs are superior devices for ultra-low-power-integrated-circuit-applications.