Facile and Eco-Friendly Fabrication Route of In2O3NP/MWCNTs Heterostructure as High-Performance Photodetectors by Laser Ablation Method

IF 3.3 4区物理与天体物理 Q2 CHEMISTRY, PHYSICAL Plasmonics Pub Date : 2024-09-13 DOI:10.1007/s11468-024-02524-w

Khawla S. Khashan, Aseel A. Hadi, Hawraa M. Abdul-Redaa

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Abstract

Colloidal In₂O₃NPs-MWCNTs heterostructure (NPs) were successfully synthesized by a facile one-step Q-switched Nd: YAG laser ablation of indium target in CNTs suspension at room temperature. Raman spectroscopy and optical absorption analysis of the prepared samples confirmed the formation of In₂O₃NPs-MWCNTs heterostructure. Transmission electron microscope (TEM) investigation of In₂O₃-CNTs structure and pure In₂O₃ nanoparticles revealed the formation of spherical nanoparticles with average size of 66 nm and 19 nm, respectively. The heterojunction photodetectors were fabricated by drop casting of colloidal In₂O₃NPs-MWCNTs NPs onto a single crystal silicon wafer. I–V characteristics of the In₂O₃NPs/Si and In₂O₃NPs-MWCNTs/Si heterojunctions under both dark and light conditions revealed rectifying properties and good photo-response. The built-in voltage was determined from the C–V measurements which revealed an abrupt junction and their values of 1.05 V and 0.59 V for In₂O₃NPs-MWCNTs/Si and In₂O₃NPs/Si, respectively. In₂O₃NPs-MWCNTs/Si photodetector demonstrated the highest responsivity and quantum efficiency of 1.3 A/W and 3.5 × 10²% at 450 nm, respectively. This In₂O₃-MWCNTs heterostructure-based photodetector with improved performance may open the door to effective Vis–NIR photodetection applications.

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用激光烧蚀法简便且环保地制备 In2O3NP/MWCNTs 异质结构作为高性能光电探测器的途径

在室温下，通过一步法 Q 开关 Nd: YAG 激光烧蚀 CNTs 悬浮液中的铟靶，成功合成了胶体 In2O3NPs-MWCNTs 异质结构（NPs）。所制备样品的拉曼光谱和光吸收分析证实了 In2O3NPs-MWCNTs 异质结构的形成。对 In2O3-CNTs 结构和纯 In2O3 纳米粒子的透射电子显微镜（TEM）研究表明，所形成的球形纳米粒子的平均尺寸分别为 66 nm 和 19 nm。通过在单晶硅晶片上滴铸胶体 In2O3NPs-MWCNTs NPs，制备了异质结光电探测器。In2O3NPs/Si 和 In2O3NPs-MWCNTs/Si 异质结在黑暗和光照条件下的 I-V 特性均显示出整流特性和良好的光响应。内置电压是通过 C-V 测量确定的，测量结果表明，In2O3NPs-MWCNTs/Si 和 In2O3NPs/Si 的结点很突然，其值分别为 1.05 V 和 0.59 V。In2O3NPs-MWCNTs/Si 光电探测器的响应率和量子效率最高，在 450 纳米波长下分别达到 1.3 A/W 和 3.5 × 102%。这种基于 In2O3-MWCNTs 异质结构的光电探测器具有更高的性能，可为有效的可见-近红外光电探测应用打开大门。

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来源期刊

Plasmonics 工程技术-材料科学：综合

CiteScore

5.90

自引率

6.70%

发文量

164

审稿时长

2.1 months

期刊介绍： Plasmonics is an international forum for the publication of peer-reviewed leading-edge original articles that both advance and report our knowledge base and practice of the interactions of free-metal electrons, Plasmons. Topics covered include notable advances in the theory, Physics, and applications of surface plasmons in metals, to the rapidly emerging areas of nanotechnology, biophotonics, sensing, biochemistry and medicine. Topics, including the theory, synthesis and optical properties of noble metal nanostructures, patterned surfaces or materials, continuous or grated surfaces, devices, or wires for their multifarious applications are particularly welcome. Typical applications might include but are not limited to, surface enhanced spectroscopic properties, such as Raman scattering or fluorescence, as well developments in techniques such as surface plasmon resonance and near-field scanning optical microscopy.