Priyesh Kumar, Sudip Kumar Deb, Subhananda Chakrabarti, Jhuma Saha
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引用次数: 0
Abstract
An experimental study of optical phonon modes, both normal and interface (IF)
phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot
heterostructures has been presented by means of low-temperature polarized Raman
scattering. The effect of Sb-content on the frequency positions of these phonon
modes has been very well correlated with the simulated strain. The Raman peaks
show different frequency shifts in the heterostructure with varying Sb-content
in the capping layer. This shift is attributed to the strain relaxation, bigger
size of quantum dots and type-II band alignment.
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