A. V. Myasoedov, M. G. Mynbaeva, S. P. Lebedev, S. Iu. Priobrazhenskii, D. G. Amelchuk, D. A. Kirilenko, A. A. Lebedev
{"title":"TEM investigation of the interface formation during transfer of 3C-SiC(001) layer onto 6H-SiC(0001) wafer","authors":"A. V. Myasoedov, M. G. Mynbaeva, S. P. Lebedev, S. Iu. Priobrazhenskii, D. G. Amelchuk, D. A. Kirilenko, A. A. Lebedev","doi":"10.1063/5.0227316","DOIUrl":null,"url":null,"abstract":"At present, intensive research is underway in the field of vacuum-sublimation growth of 3C-SiC. Transfer of a thin (001)3C-SiC layer onto a 6H-SiC wafer is a promising way to fabricate a 3C-SiC/6H-SiC substrate for growing device-quality homoepitaxial films of low defect density. The article presents the results of the structural characterization of an interface formed during the transfer of a 3C-SiC layer onto a 6H-SiC(0001) wafer, performed with transmission electron microscopy (TEM). A 3C-SiC film with a thickness of about 10 μm, grown by chemical vapor deposition (CVD) on a Si(001) substrate, was utilized in the study. Silicon acted as a bonding material in the transfer process. The morphology and microstructure of the interface between a 6H-SiC substrate and a 3C-SiC (001)-oriented layer are under consideration. TEM investigation reveals an effect of “self”-orientation of the layer with respect to the wafer during the transfer process: an interaction between the molten silicon layer and silicon carbide throughout crystallization results in the generation of defined orientation relationships with respect to substrate axes. An analysis of selected area electron diffraction patterns taken from interfaces showed the relationships to be 3C-SiC{001}‖ 6H-SiC(0001) and 3C-SiC⟨11¯0⟩∼‖ 6H-SiC⟨112¯0⟩.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":"29 9 1","pages":""},"PeriodicalIF":2.7000,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0227316","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
At present, intensive research is underway in the field of vacuum-sublimation growth of 3C-SiC. Transfer of a thin (001)3C-SiC layer onto a 6H-SiC wafer is a promising way to fabricate a 3C-SiC/6H-SiC substrate for growing device-quality homoepitaxial films of low defect density. The article presents the results of the structural characterization of an interface formed during the transfer of a 3C-SiC layer onto a 6H-SiC(0001) wafer, performed with transmission electron microscopy (TEM). A 3C-SiC film with a thickness of about 10 μm, grown by chemical vapor deposition (CVD) on a Si(001) substrate, was utilized in the study. Silicon acted as a bonding material in the transfer process. The morphology and microstructure of the interface between a 6H-SiC substrate and a 3C-SiC (001)-oriented layer are under consideration. TEM investigation reveals an effect of “self”-orientation of the layer with respect to the wafer during the transfer process: an interaction between the molten silicon layer and silicon carbide throughout crystallization results in the generation of defined orientation relationships with respect to substrate axes. An analysis of selected area electron diffraction patterns taken from interfaces showed the relationships to be 3C-SiC{001}‖ 6H-SiC(0001) and 3C-SiC⟨11¯0⟩∼‖ 6H-SiC⟨112¯0⟩.
期刊介绍:
The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research.
Topics covered in JAP are diverse and reflect the most current applied physics research, including:
Dielectrics, ferroelectrics, and multiferroics-
Electrical discharges, plasmas, and plasma-surface interactions-
Emerging, interdisciplinary, and other fields of applied physics-
Magnetism, spintronics, and superconductivity-
Organic-Inorganic systems, including organic electronics-
Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena-
Physics of devices and sensors-
Physics of materials, including electrical, thermal, mechanical and other properties-
Physics of matter under extreme conditions-
Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena-
Physics of semiconductors-
Soft matter, fluids, and biophysics-
Thin films, interfaces, and surfaces