{"title":"Realizing n-type carbon nanotubes via halide perovskite nanowires Cs4MX5 inner filling","authors":"Sisi Cao, Qiyao Yang, Juexian Cao, Wangping Xu","doi":"10.1063/5.0225284","DOIUrl":null,"url":null,"abstract":"N-type carbon nanotubes (CNTs)-based field-effect transistors (FETs) have huge potential applications in low-power consumption tunnel FETs. However, the low-work function metal electrodes can achieve n-type CNTs, but they are easily oxidized due to poor environmental stability. Therefore, based on first-principles calculations, we proposed halide perovskite nanowires Cs4MX5 (M = Pb, Sn; X = Cl, Br, I) inner filling to achieve n-type single-walled CNTs (SWCNTs). The results indicated that all the perovskite nanowires located at the center of the SWCNTs possess high stability. Moreover, the diameter of SWCNTs is a crucial factor affecting the inner filling of perovskite nanowires with an optimal diameter of about 1.4 nm. Furthermore, all the perovskite nanowires Cs4MX5 are excellent electron donors, and the largest charge transfer is up to 1.72 e/nm for Cs4SnI5. Their interaction mechanism reveals that the low work function and the large internal bandgap are two important factors for cubic-phase nanowires to realize the n-type CNTs. Our findings provide some candidate materials and a feasible way to achieve n-type CNTs for applying CNTs-based FETs.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0225284","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
N-type carbon nanotubes (CNTs)-based field-effect transistors (FETs) have huge potential applications in low-power consumption tunnel FETs. However, the low-work function metal electrodes can achieve n-type CNTs, but they are easily oxidized due to poor environmental stability. Therefore, based on first-principles calculations, we proposed halide perovskite nanowires Cs4MX5 (M = Pb, Sn; X = Cl, Br, I) inner filling to achieve n-type single-walled CNTs (SWCNTs). The results indicated that all the perovskite nanowires located at the center of the SWCNTs possess high stability. Moreover, the diameter of SWCNTs is a crucial factor affecting the inner filling of perovskite nanowires with an optimal diameter of about 1.4 nm. Furthermore, all the perovskite nanowires Cs4MX5 are excellent electron donors, and the largest charge transfer is up to 1.72 e/nm for Cs4SnI5. Their interaction mechanism reveals that the low work function and the large internal bandgap are two important factors for cubic-phase nanowires to realize the n-type CNTs. Our findings provide some candidate materials and a feasible way to achieve n-type CNTs for applying CNTs-based FETs.
期刊介绍:
The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research.
Topics covered in JAP are diverse and reflect the most current applied physics research, including:
Dielectrics, ferroelectrics, and multiferroics-
Electrical discharges, plasmas, and plasma-surface interactions-
Emerging, interdisciplinary, and other fields of applied physics-
Magnetism, spintronics, and superconductivity-
Organic-Inorganic systems, including organic electronics-
Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena-
Physics of devices and sensors-
Physics of materials, including electrical, thermal, mechanical and other properties-
Physics of matter under extreme conditions-
Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena-
Physics of semiconductors-
Soft matter, fluids, and biophysics-
Thin films, interfaces, and surfaces