{"title":"On the effect of polarization relaxation on dielectric breakdown","authors":"Serge Blonkowski","doi":"10.1063/5.0217634","DOIUrl":null,"url":null,"abstract":"This article discusses the effect of polarization relaxation on dielectric breakdown. We establish analytical statistical Weibull distributions, taking into account the changing local electric field instead of the usual static field in acceleration models. The time dependence of the local field is expressed using the universal Curie–Von Schweidler law. The derived distribution fits well with various observations on time-to-breakdown statistical distributions. In the case of voltage square pulse alternative stress, the calculated time to breakdown follows a power law with stress frequency, regardless of the field dependence of the acceleration model, consistent with observations. The dielectric lifetime is longer compared to continuous voltage stress, as observed in transistors and integrated capacitors. The analytical expression of the power law exponent depends on the field acceleration model and polarization current. It matches well with the measured values for metal–oxide–semiconductor and metal insulator metal capacitors with different dielectrics. The power law exponent increases with the static dielectric constant. The Weibull shape factor is shown to be lower in the AC mode than in the DC mode, as observed. The AC signal duty factor effect decreases the lifetime in the AC mode. Finally, we demonstrate that the consequence of polarization relaxation also affects the lifetime in the DC mode. The acceleration factor and lifetime projections are close to power laws with the field, regardless of the static field dependence of the acceleration model.","PeriodicalId":15088,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0217634","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
This article discusses the effect of polarization relaxation on dielectric breakdown. We establish analytical statistical Weibull distributions, taking into account the changing local electric field instead of the usual static field in acceleration models. The time dependence of the local field is expressed using the universal Curie–Von Schweidler law. The derived distribution fits well with various observations on time-to-breakdown statistical distributions. In the case of voltage square pulse alternative stress, the calculated time to breakdown follows a power law with stress frequency, regardless of the field dependence of the acceleration model, consistent with observations. The dielectric lifetime is longer compared to continuous voltage stress, as observed in transistors and integrated capacitors. The analytical expression of the power law exponent depends on the field acceleration model and polarization current. It matches well with the measured values for metal–oxide–semiconductor and metal insulator metal capacitors with different dielectrics. The power law exponent increases with the static dielectric constant. The Weibull shape factor is shown to be lower in the AC mode than in the DC mode, as observed. The AC signal duty factor effect decreases the lifetime in the AC mode. Finally, we demonstrate that the consequence of polarization relaxation also affects the lifetime in the DC mode. The acceleration factor and lifetime projections are close to power laws with the field, regardless of the static field dependence of the acceleration model.
期刊介绍:
The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research.
Topics covered in JAP are diverse and reflect the most current applied physics research, including:
Dielectrics, ferroelectrics, and multiferroics-
Electrical discharges, plasmas, and plasma-surface interactions-
Emerging, interdisciplinary, and other fields of applied physics-
Magnetism, spintronics, and superconductivity-
Organic-Inorganic systems, including organic electronics-
Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena-
Physics of devices and sensors-
Physics of materials, including electrical, thermal, mechanical and other properties-
Physics of matter under extreme conditions-
Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena-
Physics of semiconductors-
Soft matter, fluids, and biophysics-
Thin films, interfaces, and surfaces