Mechanical and Thermoelectric Properties of Na-Intercalated SnSe2 Crystals

IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY ACS Applied Materials & Interfaces Pub Date : 2024-09-18 DOI:10.1021/acsaem.4c01928
Zhiping Liu, Tingting Deng, Pengfei Qiu, Wenwen Zheng, Zhi Li, Zhengyang Zhou, Xun Shi
{"title":"Mechanical and Thermoelectric Properties of Na-Intercalated SnSe2 Crystals","authors":"Zhiping Liu, Tingting Deng, Pengfei Qiu, Wenwen Zheng, Zhi Li, Zhengyang Zhou, Xun Shi","doi":"10.1021/acsaem.4c01928","DOIUrl":null,"url":null,"abstract":"Recently, two-dimensional (2D) van der Waals (vdW) SnSe<sub>2</sub>-based crystals have attracted great attention due to their metal-like plasticity and good thermoelectric (TE) performance at room temperature. The halogen elements have been successfully doped at Se sites in SnSe<sub>2</sub> crystals to greatly improve the TE properties while maintaining good plasticity. As a typical layered material, the space among the vdW layers in SnSe<sub>2</sub> is quite large and can be intercalated by guest elements to tune various physical properties. In this work, we successfully prepared a series of Na-intercalated SnSe<sub>2</sub> crystals by using the temperature gradient method. The effects of intercalating Na into the vdW gaps on the crystal structure and mechanical and TE properties are systematically investigated. Intercalating Na in SnSe<sub>2</sub> has little influence on the crystal structure and band gap. The electrical conductivity is enhanced by Na-intercalation, but the doping efficiency is lower than those of Br and Cl. A maximum power factor (PF) of 5.6 μW cm<sup>–1</sup> K<sup>–2</sup> is obtained for Na<sub>0.02</sub>SnSe<sub>2</sub> at 300 K, comparable with most Ag<sub>2</sub>S- and AgCuSe-based plastic inorganic TE materials. The plasticity of SnSe<sub>2</sub> is well maintained when the Na-intercalating content is below 0.05. This work provides more understanding of SnSe<sub>2</sub>-based plastic TE materials.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":8.3000,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsaem.4c01928","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Recently, two-dimensional (2D) van der Waals (vdW) SnSe2-based crystals have attracted great attention due to their metal-like plasticity and good thermoelectric (TE) performance at room temperature. The halogen elements have been successfully doped at Se sites in SnSe2 crystals to greatly improve the TE properties while maintaining good plasticity. As a typical layered material, the space among the vdW layers in SnSe2 is quite large and can be intercalated by guest elements to tune various physical properties. In this work, we successfully prepared a series of Na-intercalated SnSe2 crystals by using the temperature gradient method. The effects of intercalating Na into the vdW gaps on the crystal structure and mechanical and TE properties are systematically investigated. Intercalating Na in SnSe2 has little influence on the crystal structure and band gap. The electrical conductivity is enhanced by Na-intercalation, but the doping efficiency is lower than those of Br and Cl. A maximum power factor (PF) of 5.6 μW cm–1 K–2 is obtained for Na0.02SnSe2 at 300 K, comparable with most Ag2S- and AgCuSe-based plastic inorganic TE materials. The plasticity of SnSe2 is well maintained when the Na-intercalating content is below 0.05. This work provides more understanding of SnSe2-based plastic TE materials.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
钠钙化 SnSe2 晶体的机械和热电特性
最近,基于 SnSe2 的二维(2D)范德华(vdW)晶体因其类似金属的可塑性和室温下良好的热电(TE)性能而备受关注。在 SnSe2 晶体的 Se 位点成功掺杂卤素元素,从而在保持良好塑性的同时大大提高了 TE 性能。作为一种典型的层状材料,SnSe2 中 vdW 层之间的空间相当大,可以通过客体元素的插层来调整各种物理性质。在这项工作中,我们采用温度梯度法成功制备了一系列 Na 插层 SnSe2 晶体。系统研究了在 vdW 间隙中插层 Na 对晶体结构、力学和 TE 性能的影响。在 SnSe2 中夹杂 Na 对晶体结构和带隙的影响很小。Na掺杂增强了导电性,但掺杂效率低于Br和Cl。Na0.02SnSe2 在 300 K 时的最大功率因数(PF)为 5.6 μW cm-1 K-2,与大多数基于 Ag2S 和 AgCuSe 的塑性无机 TE 材料相当。当 Na 的掺杂含量低于 0.05 时,SnSe2 的可塑性保持良好。这项研究加深了人们对 SnSe2 塑料 TE 材料的了解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
期刊最新文献
Low-Grade Chronic Inflammation: a Shared Mechanism for Chronic Diseases. Predictors of Inflammation-Mediated Preterm Birth. Factors Contributing to Heat Tolerance in Humans and Experimental Models. Harnessing Deep Learning Methods for Voltage-Gated Ion Channel Drug Discovery. Role of RANKL Signaling in Bone Homeostasis.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1