{"title":"Investigation into the carrier recombination in Sb2Se3: Photo thermal effect, trapped carrier absorption and hot carrier cooling","authors":"","doi":"10.1016/j.chemphys.2024.112448","DOIUrl":null,"url":null,"abstract":"<div><p>Understanding the carrier recombination processes in Sb<sub>2</sub>Se<sub>3</sub> is essential for its optoelectronic applications. In this work, carrier recombination dynamics in Sb<sub>2</sub>Se<sub>3</sub> were studied by broad band transient absorption spectroscopy. Firstly, the contribution of photothermal effect to the transient absorption spectrum was thoroughly discussed. It is confirmed that the excited state absorption (ESA) band with lifetime of several nanoseconds results from co-contribution of photo thermal effect and deep trapped carrier absorption. Secondly, the features of transient absorption spectrum on picosecond time scale were interpreted. The short-lived ESA band around 1000 nm was assigned to shallow trapped carrier absorption, while not band gap renormalization (BGR) or free carrier absorption. By globally fitting the transient absorption spectrum, the hot carrier cooling time and time constant for free carrier relax into deep trap state were determined to be 0.25∼0.45 ps and 3.1∼8.7 ps, respectively. Finally, we built up the carrier recombination model of Sb<sub>2</sub>Se<sub>3</sub>. The experimental results in this work will improve the understanding on the carrier recombination in Sb<sub>2</sub>Se<sub>3</sub>.</p></div>","PeriodicalId":272,"journal":{"name":"Chemical Physics","volume":null,"pages":null},"PeriodicalIF":2.0000,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Physics","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0301010424002775","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Understanding the carrier recombination processes in Sb2Se3 is essential for its optoelectronic applications. In this work, carrier recombination dynamics in Sb2Se3 were studied by broad band transient absorption spectroscopy. Firstly, the contribution of photothermal effect to the transient absorption spectrum was thoroughly discussed. It is confirmed that the excited state absorption (ESA) band with lifetime of several nanoseconds results from co-contribution of photo thermal effect and deep trapped carrier absorption. Secondly, the features of transient absorption spectrum on picosecond time scale were interpreted. The short-lived ESA band around 1000 nm was assigned to shallow trapped carrier absorption, while not band gap renormalization (BGR) or free carrier absorption. By globally fitting the transient absorption spectrum, the hot carrier cooling time and time constant for free carrier relax into deep trap state were determined to be 0.25∼0.45 ps and 3.1∼8.7 ps, respectively. Finally, we built up the carrier recombination model of Sb2Se3. The experimental results in this work will improve the understanding on the carrier recombination in Sb2Se3.
期刊介绍：
Chemical Physics publishes experimental and theoretical papers on all aspects of chemical physics. In this journal, experiments are related to theory, and in turn theoretical papers are related to present or future experiments. Subjects covered include: spectroscopy and molecular structure, interacting systems, relaxation phenomena, biological systems, materials, fundamental problems in molecular reactivity, molecular quantum theory and statistical mechanics. Computational chemistry studies of routine character are not appropriate for this journal.
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