Improved expressions of noise parameters for InP HEMTs

Abstract

In this article, we propose a set of new expressions of four noise parameters for InP high electron mobility transistor (HEMT) devices based on PRC noise equivalent circuit model. The effects of gate-to-drain capacitance, drain-to-source conductance as well as extrinsic resistances have been taken into account. High consistency between measured and modeled noise parameters for 70 nm HEMT with 2 × 30 μm gate width in the frequency range 8–50 GHz are given by the expressions. Great usability is demonstrated for determination of small signal and noise model parameters extraction.