Oxygen-Plasma-Treated Al/TaO_X/Al Resistive Memory for Enhanced Synaptic Characteristics.

IF 3.4 3区医学 Q1 ENGINEERING, MULTIDISCIPLINARY Biomimetics Pub Date : 2024-09-23 DOI:10.3390/biomimetics9090578

Gyeongpyo Kim, Seoyoung Park, Minsuk Koo, Sungjun Kim

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Abstract

In this study, we investigate the impact of O₂ plasma treatment on the performance of Al/TaO_X/Al-based resistive random-access memory (RRAM) devices, focusing on applications in neuromorphic systems. Comparative analysis using scanning electron microscopy and X-ray photoelectron spectroscopy confirmed the differences in chemical composition between O₂-plasma-treated and untreated RRAM cells. Direct-current measurements showed that O₂-plasma-treated RRAM cells exhibited significant improvements over untreated RRAM cells, including higher on/off ratios, improved uniformity and distribution, longer retention times, and enhanced durability. The conduction mechanism is investigated by current-voltage (I-V) curve fitting. In addition, paired-pulse facilitation (PPF) is observed using partial short-term memory. Furthermore, 3- and 4-bit weight tuning with auto-pulse-tuning algorithms was achieved to improve the controllability of the synapse weight for the neuromorphic system, maintaining retention times exceeding 10³ s in the multiple states. Neuromorphic simulation with an MNIST dataset is conducted to evaluate the synaptic device.

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经等离子氧处理的铝/TaOX/铝电阻存储器可增强突触特性。

在本研究中，我们以神经形态系统中的应用为重点，研究了氧气等离子体处理对铝/TaOX/铝基电阻式随机存取存储器（RRAM）器件性能的影响。使用扫描电子显微镜和 X 射线光电子能谱进行的比较分析证实了经 O2 等离子处理和未经处理的 RRAM 单元之间化学成分的差异。直流测量结果表明，经 O2- 等离子体处理的 RRAM 电池比未经处理的 RRAM 电池有显著改善，包括更高的导通/关断比、更好的均匀性和分布、更长的保持时间以及更高的耐用性。通过电流-电压（I-V）曲线拟合研究了传导机制。此外，还利用部分短时记忆观察到了成对脉冲促进（PPF）。此外，利用自动脉冲调谐算法实现了 3 位和 4 位权重调整，从而提高了神经形态系统对突触权重的可控性，在多种状态下保持超过 103 秒的保持时间。利用 MNIST 数据集进行了神经形态仿真，以评估突触装置。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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