AM–AM and AM–PM Distortion in D-Band BiCMOS Vector-Interpolation Phase Shifters

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2024-10-02 DOI:10.1109/JSSC.2024.3464863
Lorenzo Piotto;Guglielmo De Filippi;Andrea Bilato;Andrea Mazzanti
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Abstract

Sub-THz phased-array transceivers need phase shifters for a coherent combination of the transmitted and received signals. Vector-interpolation phase shifters demonstrate wide bandwidth, low loss, and compact footprint, but may suffer from poor linearity, restrained by the need of high dynamic range variable gain amplifiers (VGAs). This article investigates the role of VGA impairments in a vector-interpolation phase shifter, with primary focus on the AM–AM and AM–PM distortions. Then, three common VGA structures are analyzed and compared, revealing a best candidate to optimize linearity. A single-ended input/output phase shifter is finally implemented in 55nm SiGe BiCMOS technology. The test chip allows experimental validation of the theoretical results by using the VGAs in different operating modes. It is also shown that, in a single-ended phase shifter, the common-mode current generated by the VGAs may compromise gain and linearity. Solutions to the problem are introduced in the design, including a novel current-mode balun that provides large (4:1) impedance transformation and high common-mode rejection with equal primary and secondary inductors. Experimental results prove wideband operation, from 130 to 175 GHz, with 3.5 dB gain. The phase shift is programmable in 10° steps with rms phase and amplitude errors across frequency < 5° and <0.8 dB, respectively. With the optimal VGA operation mode, the output power at 1 dB gain compression (OP1dB) is above 1.8 dBm with <10° AM–PM distortion. Experiments compare favorably against previous works in the same band and in similar technologies.
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D$ 波段 BiCMOS 矢量插值移相器中的 AM-AM 和 AM-PM 失真
次太赫兹相控阵收发器需要移相器来实现发射和接收信号的相干组合。矢量插值移相器具有带宽宽、损耗低、占用空间小的特点,但由于需要高动态范围可变增益放大器(VGAs),其线性度较差。本文研究了VGA损伤在矢量插值移相器中的作用,主要关注AM-AM和AM-PM失真。然后,分析和比较了三种常见的VGA结构,揭示了优化线性度的最佳候选结构。最后,采用55nm SiGe BiCMOS技术实现了单端输入/输出移相器。该测试芯片允许在不同工作模式下使用VGAs对理论结果进行实验验证。结果还表明,在单端移相器中,由VGAs产生的共模电流可能会损害增益和线性度。在设计中介绍了解决问题的方法,包括一种新型的电流模式平衡器,它提供了大(4:1)的阻抗变换和高共模抑制,具有相等的初级和次级电感。实验结果表明,该系统工作在130 ~ 175 GHz的宽带范围内,增益为3.5 dB。相移可编程为10°步进,频率范围内的相位和幅度误差有效值分别< 5°和<0.8 dB。在最佳VGA工作模式下,1dB增益压缩(OP1dB)的输出功率大于1.8 dBm, AM-PM失真<10°。实验结果与以前在同一波段和类似技术下的研究结果相比是有利的。
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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