A 3.96-μm, 124-dB Dynamic-Range, Digital-Pixel Sensor With Triple- and Single-Quantization Operations for Monochrome and Near-Infrared Dual-Channel Global Shutter Operation

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2024-10-07 DOI:10.1109/JSSC.2024.3463688
Ken Miyauchi;Masayuki Uno;Toshiyuki Isozaki;Hideyuki Fukuhara;Kazuya Mori;Hirofumi Abe;Masato Nagamatsu;Rimon Ikeno;Isao Takayanagi;Hsin-Li Chen;Chih-Hao Lin;Wen-Chien Fu;Shou-Gwo Wuu;Song Chen;Lyle Bainbridge;Qing Chao;Ramakrishna Chilukuri;Wei Gao;Andrew P. Hammond;Tsung-Hsun Tsai;Chiao Liu
{"title":"A 3.96-μm, 124-dB Dynamic-Range, Digital-Pixel Sensor With Triple- and Single-Quantization Operations for Monochrome and Near-Infrared Dual-Channel Global Shutter Operation","authors":"Ken Miyauchi;Masayuki Uno;Toshiyuki Isozaki;Hideyuki Fukuhara;Kazuya Mori;Hirofumi Abe;Masato Nagamatsu;Rimon Ikeno;Isao Takayanagi;Hsin-Li Chen;Chih-Hao Lin;Wen-Chien Fu;Shou-Gwo Wuu;Song Chen;Lyle Bainbridge;Qing Chao;Ramakrishna Chilukuri;Wei Gao;Andrew P. Hammond;Tsung-Hsun Tsai;Chiao Liu","doi":"10.1109/JSSC.2024.3463688","DOIUrl":null,"url":null,"abstract":"This article presents a 3.96-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m, <inline-formula> <tex-math>$640 \\times 640$ </tex-math></inline-formula> pixel stacked digital pixel sensor capable of capturing co-located monochrome (MONO) and near-infrared (NIR) frames simultaneously in a dual-channel global shutter (GS) operation. A super-pixel structure is proposed with diagonally arranged <inline-formula> <tex-math>$2 \\times 2$ </tex-math></inline-formula> MONO and NIR sub-pixels. To enhance visible light sensitivity, large and small non-uniform micro-lenses are formed on the MONO and NIR sub-pixels, respectively. Each floating diffusion (FD) shared super-pixel is connected to an in-pixel analog-to-digital converter and two banks of 10-bit static random access memories (SRAMs) to enable the dual-channel GS operation. To achieve high dynamic range (DR) in the MONO channel, a triple-quantization (3Q) operation is performed. Furthermore, a single-channel digital-correlated double sampling (D-CDS) 3Q operation is implemented. The fabricated sensor achieved 6.2-mW low power consumption at 30 frames/s with dual-channel capture. The MONO channel achieved 124-dB DR in the 3Q operation and 60 dB for the NIR channel. The sensor fits the stringent form-factor requirement of an augmented reality headset by consolidating MONO and NIR imaging capabilities.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 5","pages":"1771-1781"},"PeriodicalIF":5.6000,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10706075","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Solid-state Circuits","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10706075/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

This article presents a 3.96- $\mu $ m, $640 \times 640$ pixel stacked digital pixel sensor capable of capturing co-located monochrome (MONO) and near-infrared (NIR) frames simultaneously in a dual-channel global shutter (GS) operation. A super-pixel structure is proposed with diagonally arranged $2 \times 2$ MONO and NIR sub-pixels. To enhance visible light sensitivity, large and small non-uniform micro-lenses are formed on the MONO and NIR sub-pixels, respectively. Each floating diffusion (FD) shared super-pixel is connected to an in-pixel analog-to-digital converter and two banks of 10-bit static random access memories (SRAMs) to enable the dual-channel GS operation. To achieve high dynamic range (DR) in the MONO channel, a triple-quantization (3Q) operation is performed. Furthermore, a single-channel digital-correlated double sampling (D-CDS) 3Q operation is implemented. The fabricated sensor achieved 6.2-mW low power consumption at 30 frames/s with dual-channel capture. The MONO channel achieved 124-dB DR in the 3Q operation and 60 dB for the NIR channel. The sensor fits the stringent form-factor requirement of an augmented reality headset by consolidating MONO and NIR imaging capabilities.
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一款 3.96 美元/μm、124 分贝动态范围的数字像素传感器,采用三量化和单量化操作,适用于单色和近红外双通道全局快门操作
本文介绍了一种3.96- $\mu $ m, $640 \ × 640$像素的堆叠数字像素传感器,能够在双通道全局快门(GS)操作下同时捕获单色(MONO)和近红外(NIR)帧。提出了一种由对角线排列的$2 \ × 2$单光和近红外子像素组成的超像素结构。为了提高可见光灵敏度,在单光和近红外亚像素上分别形成大、小的非均匀微透镜。每个浮动扩散(FD)共享超像素连接到一个像素内模数转换器和两组10位静态随机存取存储器(sram),以实现双通道GS操作。为了在MONO通道中实现高动态范围(DR),需要执行三重量化(3Q)操作。此外,还实现了单通道数字相关双采样(D-CDS) 3Q运算。制造的传感器在30帧/秒的双通道捕获下实现了6.2 mw的低功耗。MONO通道在3Q操作中实现124 dB DR,近红外通道实现60 dB DR。该传感器通过整合MONO和NIR成像功能,符合增强现实耳机的严格外形要求。
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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