{"title":"A Bond Wire Aging Monitoring Method for IGBT Modules Based on Bond Wire Degradation Voltage","authors":"Zongyuan Dai;Xinglai Ge;Chunxu Lin;Huimin Wang;Zhiliang Xu;Gengle Liang","doi":"10.1109/JESTPE.2024.3476374","DOIUrl":null,"url":null,"abstract":"The issue of the bond wire aging obviously degrades the reliability of insulated gate bipolar transistor (IGBT) modules, and thus, the bond wire aging monitoring (AM) method is highly desired. However, many AM methods are subjected to the effects of junction temperature variations and consequently suffer from degraded accuracy. To address this, a bond wire AM method based on the bond wire degradation voltage (\n<inline-formula> <tex-math>$V_{\\text {BWD}}$ </tex-math></inline-formula>\n) is proposed, which can mitigate the effects of junction temperature variations. In the proposed AM method, with the established multiphysics field coupling model of the IGBT module, \n<inline-formula> <tex-math>$V_{\\text {BWD}}$ </tex-math></inline-formula>\n is selected as the bond wire aging indicator, which is not affected by junction temperature variations. Moreover, an extracting method of \n<inline-formula> <tex-math>$V_{\\text {BWD}}$ </tex-math></inline-formula>\n based on the ON-state voltage evolution model (OSVEM) is developed. Afterward, the availability of \n<inline-formula> <tex-math>$V_{\\text {BWD}}$ </tex-math></inline-formula>\n is thoroughly investigated by using the double-pulse tests. Finally, the effectiveness of the proposed bond wire AM method is verified by experimental tests.","PeriodicalId":13093,"journal":{"name":"IEEE Journal of Emerging and Selected Topics in Power Electronics","volume":"12 6","pages":"5534-5543"},"PeriodicalIF":4.9000,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Emerging and Selected Topics in Power Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10711298/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The issue of the bond wire aging obviously degrades the reliability of insulated gate bipolar transistor (IGBT) modules, and thus, the bond wire aging monitoring (AM) method is highly desired. However, many AM methods are subjected to the effects of junction temperature variations and consequently suffer from degraded accuracy. To address this, a bond wire AM method based on the bond wire degradation voltage (
$V_{\text {BWD}}$
) is proposed, which can mitigate the effects of junction temperature variations. In the proposed AM method, with the established multiphysics field coupling model of the IGBT module,
$V_{\text {BWD}}$
is selected as the bond wire aging indicator, which is not affected by junction temperature variations. Moreover, an extracting method of
$V_{\text {BWD}}$
based on the ON-state voltage evolution model (OSVEM) is developed. Afterward, the availability of
$V_{\text {BWD}}$
is thoroughly investigated by using the double-pulse tests. Finally, the effectiveness of the proposed bond wire AM method is verified by experimental tests.
键合线老化问题明显降低了绝缘栅双极晶体管(IGBT)模块的可靠性,因此,迫切需要键合线老化监测(AM)方法。然而,许多增材制造方法受到结温变化的影响,因此精度下降。为了解决这个问题,提出了一种基于键合线退化电压($V_{\text {BWD}}$)的键合线AM方法,该方法可以减轻结温变化的影响。在本文提出的增材制造方法中,利用已建立的IGBT模块多物理场耦合模型,选择$V_{\text {BWD}}$作为键合线老化指标,该指标不受结温变化的影响。此外,提出了一种基于on -state voltage evolution model (OSVEM)的$V_{\text {BWD}}$的提取方法。然后,通过使用双脉冲测试彻底研究了$V_{\text {BWD}}$的可用性。最后,通过实验验证了该方法的有效性。
期刊介绍:
The aim of the journal is to enable the power electronics community to address the emerging and selected topics in power electronics in an agile fashion. It is a forum where multidisciplinary and discriminating technologies and applications are discussed by and for both practitioners and researchers on timely topics in power electronics from components to systems.