Precursor Prediction and Early Warning of Power MOSFET Failure Using Machine Learning With Model Uncertainty Considered

IF 4.9 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Emerging and Selected Topics in Power Electronics Pub Date : 2024-10-09 DOI:10.1109/JESTPE.2024.3476980
Yuluo Hou;Chang Lu;Waseem Abbas;Mesfin Seid Ibrahim;Muhammad Waseem;Hiu Hung Lee;Ka-Hong Loo
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Abstract

As the core component of power electronic systems, health monitoring of metal-oxide–semiconductor field-effect transistor (MOSFET) is extremely crucial. In this article, a hybrid failure precursor prediction model based on machine learning techniques is proposed. It consists of an isolation forest method and a long short-term memory (LSTM) network. The proposed model extracts information from different aspects of the input data to make predictions and can be sensitive to abnormal data behavior. By detecting the abnormality in the curve and predicting its future behavior, the model can give early warning of the power MOSFET failure and help avoid unexpected accidents. Besides, the model uncertainty is discussed. Two main factors that affect the model uncertainty of the proposed model are evaluated. To reduce the model uncertainty, a Bayesian neural network (BNN) is used to quantify the uncertainty of the proposed model with different parameters. The performance of the proposed model is verified based on the power MOSFET data collected from the accelerated life tests (ALTs). The experimental results indicate satisfying performances of the proposed model, because it can not only give early warning of MOSFET failures but also provide more stable prediction results with less model uncertainty compared with other existing models.
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利用考虑模型不确定性的机器学习对功率 MOSFET 故障进行前兆预测和预警
作为电力电子系统的核心器件,金属氧化物半导体场效应晶体管(MOSFET)的健康监测至关重要。本文提出了一种基于机器学习技术的混合故障前兆预测模型。它由隔离森林方法和长短期记忆(LSTM)网络组成。该模型从输入数据的不同方面提取信息进行预测,并且对异常数据行为敏感。该模型通过检测曲线中的异常并预测其未来行为,可以对功率MOSFET的故障进行预警,避免意外事故的发生。此外,还讨论了模型的不确定性。评估了影响模型不确定性的两个主要因素。为了降低模型的不确定性,采用贝叶斯神经网络(BNN)对不同参数下模型的不确定性进行量化。基于加速寿命试验(ALTs)收集的功率MOSFET数据,验证了该模型的性能。实验结果表明,与现有模型相比,该模型不仅能够对MOSFET故障进行预警,而且预测结果更稳定,模型不确定性更小。
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来源期刊
CiteScore
12.50
自引率
9.10%
发文量
547
审稿时长
3 months
期刊介绍: The aim of the journal is to enable the power electronics community to address the emerging and selected topics in power electronics in an agile fashion. It is a forum where multidisciplinary and discriminating technologies and applications are discussed by and for both practitioners and researchers on timely topics in power electronics from components to systems.
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