Pulsed-Laser Deposition of Ge-Doped BiTe Nanofilms and Their Application in Room-Temperature Long-Wave Infrared Photodetection (Advanced Optical Materials 28/2024)
Wan Wang, Ximiao Wang, Jiandong Yao, Huanjun Chen, Guowei Yang
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Abstract
Pulsed-Laser Deposition of Ge-Doped BiTe Nanofilms for Photodetection
Pulsed-laser deposition is developed for the large-area synthesis of Ge-doped BiTe nanofilms, which are successfully exploited for room-temperature high-speed long-wave infrared photodetection and optical communications. For more information on these achievements, see article number 2401937 by Jiandong Yao, Huanjun Chen, and co-workers.
期刊介绍：
Advanced Optical Materials, part of the esteemed Advanced portfolio, is a unique materials science journal concentrating on all facets of light-matter interactions. For over a decade, it has been the preferred optical materials journal for significant discoveries in photonics, plasmonics, metamaterials, and more. The Advanced portfolio from Wiley is a collection of globally respected, high-impact journals that disseminate the best science from established and emerging researchers, aiding them in fulfilling their mission and amplifying the reach of their scientific discoveries.
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