Recent progress of inorganic photoresists for next-generation EUV lithography

Abstract

The continuous scaling down of semiconductor devices has significantly benefited consumers by enhancing the device performance, portability, power efficiency, and affordability. Recently, chip makers have embraced extreme ultraviolet (EUV) lithography to spearhead the market leadership of sub-10 nm patterning. This surge in EUV adoption has sparked extensive research on EUV photoresists, focusing on materials with various metallic elements to improve the EUV sensitivity and advance nanolithography. Previous studies explored the determinants of sensitivity and pattern formation. Recently, interest has shifted toward dry photoresists and innovative techniques, such as resistless lithography. This review summarizes the research on inorganic EUV photoresists and outlines strategies to boost the lithographic performance and tackle future challenges.