{"title":"Electronic Properties of Highly Compensated Semiconductors: The HR-GaAs:Cr Material","authors":"O. P. Tolbanov","doi":"10.1007/s11182-024-03273-3","DOIUrl":null,"url":null,"abstract":"<p>It is found out that the HR-GaAs:Cr material is formed when the conductivity of<i> n</i>-GaAs is compensated by <i>N</i><sub>Cr</sub> chromium atoms, resulting in highly localized acceptor states at the mid of the bandgap. Such a structure is characterized by both the extremely high resistivity (ρ<sub><i>max</i></sub>), exceeding the resistance (ρ<sub><i>i</i></sub>) of its own semiconductor (ρ<sub><i>max</i></sub> ≥ ρ<sub><i>i</i></sub>), and the prolonged lifetime (τ<sub><i>n</i></sub>) of non-equilibrium electrons, determining its high photosensitivity. Thus, it can be implemented in various basic electronic components for functional devices.</p>","PeriodicalId":770,"journal":{"name":"Russian Physics Journal","volume":"67 9","pages":"1492 - 1499"},"PeriodicalIF":0.4000,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Physics Journal","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s11182-024-03273-3","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
It is found out that the HR-GaAs:Cr material is formed when the conductivity of n-GaAs is compensated by NCr chromium atoms, resulting in highly localized acceptor states at the mid of the bandgap. Such a structure is characterized by both the extremely high resistivity (ρmax), exceeding the resistance (ρi) of its own semiconductor (ρmax ≥ ρi), and the prolonged lifetime (τn) of non-equilibrium electrons, determining its high photosensitivity. Thus, it can be implemented in various basic electronic components for functional devices.
期刊介绍：
Russian Physics Journal covers the broad spectrum of specialized research in applied physics, with emphasis on work with practical applications in solid-state physics, optics, and magnetism. Particularly interesting results are reported in connection with: electroluminescence and crystal phospors; semiconductors; phase transformations in solids; superconductivity; properties of thin films; and magnetomechanical phenomena.
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