{"title":"Investigation of the Filament Properties in the HfO2-Based Structures Using Conductive Atomic Force Microscopy","authors":"A. G. Isaev, O. O. Permiakova, A. E. Rogozhin","doi":"10.1134/S1063784224070181","DOIUrl":null,"url":null,"abstract":"<p>The results of the research on the resistive switching in Pt/HfO<sub>2</sub>/HfO<sub><i>x</i></sub>N<sub><i>y</i></sub>/TiN, Pt/HfO<sub>2</sub>/TaO<sub><i>x</i></sub>N<sub><i>y</i></sub>/TiN and Pt/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>/TaO<sub><i>x</i></sub>N<sub><i>y</i></sub>/TiN structures are presented. Active layers of the structures were deposited by atomic layer deposition. The formation of conductive filaments in all three structures was demonstrated using conductive atomic force microscopy. A full cycle of resistive switching with a microscope probe in these structures was also demonstrated. The properties of filaments formed at different voltages were studied, and the distributions of the filament density by conductivity and size were presented. The characteristics of the studied structures were compared. It appears that the Pt/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>/TaO<sub><i>x</i></sub>N<sub><i>y</i></sub>/TiN structure has the greatest potential for resistive random-access memory application.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"1986 - 1993"},"PeriodicalIF":1.1000,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S1063784224070181","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
The results of the research on the resistive switching in Pt/HfO2/HfOxNy/TiN, Pt/HfO2/TaOxNy/TiN and Pt/Al2O3/HfO2/TaOxNy/TiN structures are presented. Active layers of the structures were deposited by atomic layer deposition. The formation of conductive filaments in all three structures was demonstrated using conductive atomic force microscopy. A full cycle of resistive switching with a microscope probe in these structures was also demonstrated. The properties of filaments formed at different voltages were studied, and the distributions of the filament density by conductivity and size were presented. The characteristics of the studied structures were compared. It appears that the Pt/Al2O3/HfO2/TaOxNy/TiN structure has the greatest potential for resistive random-access memory application.
期刊介绍：
Technical Physics is a journal that contains practical information on all aspects of applied physics, especially instrumentation and measurement techniques. Particular emphasis is put on plasma physics and related fields such as studies of charged particles in electromagnetic fields, synchrotron radiation, electron and ion beams, gas lasers and discharges. Other journal topics are the properties of condensed matter, including semiconductors, superconductors, gases, liquids, and different materials.
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