Electronic States of the Conduction Band of Ultrathin Furan-Phenylene Co-Oligomer Films on the Surfaces of Oxidized Silicon and Layer-by-Layer Grown Zinc Oxide

IF 0.6 4区 材料科学 Q4 CRYSTALLOGRAPHY Crystallography Reports Pub Date : 2024-09-27 DOI:10.1134/S1063774524601266
A. S. Komolov, I. A. Pronin, E. F. Lazneva, V. S. Sobolev, E. A. Dubov, A. A. Komolova, E. V. Zhizhin, D. A. Pudikov, S. A. Pshenichnyuk, Ch. S. Becker, M. S. Kazantsev, F. Dj. Akbarova, U. B. Sharopov
{"title":"Electronic States of the Conduction Band of Ultrathin Furan-Phenylene Co-Oligomer Films on the Surfaces of Oxidized Silicon and Layer-by-Layer Grown Zinc Oxide","authors":"A. S. Komolov,&nbsp;I. A. Pronin,&nbsp;E. F. Lazneva,&nbsp;V. S. Sobolev,&nbsp;E. A. Dubov,&nbsp;A. A. Komolova,&nbsp;E. V. Zhizhin,&nbsp;D. A. Pudikov,&nbsp;S. A. Pshenichnyuk,&nbsp;Ch. S. Becker,&nbsp;M. S. Kazantsev,&nbsp;F. Dj. Akbarova,&nbsp;U. B. Sharopov","doi":"10.1134/S1063774524601266","DOIUrl":null,"url":null,"abstract":"<p>The results of studying the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene and the results of analyzing the interfacial potential barrier upon the formation of these films on the surfaces of (SiO<sub>2</sub>)<i>n</i>-Si and layer-by-layer deposited ZnO are presented. The formation of a (8–10)-nm-thick co-oligomer film was investigated by total current spectroscopy; the energy range from 5 to 20 eV above <i>E</i><sub>F</sub> was analyzed. Furan-phenylene co-oligomer films on the (SiO<sub>2</sub>)<i>n</i>-Si surface have a domain structure with a characteristic domain size of ~1 × 1 µm and surface roughness within a domain of no more than 1 nm. The films on the ZnO surface have a granular structure with a grain height of 40–50 nm.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":"69 4","pages":"556 - 560"},"PeriodicalIF":0.6000,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystallography Reports","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S1063774524601266","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
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Abstract

The results of studying the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene and the results of analyzing the interfacial potential barrier upon the formation of these films on the surfaces of (SiO2)n-Si and layer-by-layer deposited ZnO are presented. The formation of a (8–10)-nm-thick co-oligomer film was investigated by total current spectroscopy; the energy range from 5 to 20 eV above EF was analyzed. Furan-phenylene co-oligomer films on the (SiO2)n-Si surface have a domain structure with a characteristic domain size of ~1 × 1 µm and surface roughness within a domain of no more than 1 nm. The films on the ZnO surface have a granular structure with a grain height of 40–50 nm.

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氧化硅和逐层生长的氧化锌表面超薄呋喃-苯基共聚物薄膜导带的电子状态
本文介绍了研究呋喃-苯基共配体 1,4-双(5-苯基呋喃-2-基)苯超薄薄膜导带电子态的结果,以及分析这些薄膜在 (SiO2)n-Si 和逐层沉积氧化锌表面形成时的界面势垒的结果。通过全电流光谱法研究了 (8-10)-nm 厚的共聚物薄膜的形成;分析了 EF 以上 5 至 20 eV 的能量范围。(SiO2)n-Si表面上的呋喃-苯共聚物薄膜具有畴结构,特征畴尺寸为 ~1 × 1 µm,畴内表面粗糙度不超过 1 nm。氧化锌表面的薄膜具有粒状结构,粒高为 40-50 纳米。
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来源期刊
Crystallography Reports
Crystallography Reports 化学-晶体学
CiteScore
1.10
自引率
28.60%
发文量
96
审稿时长
4-8 weeks
期刊介绍: Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.
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