{"title":"LiNbO3-based ferroelectric tunnel junctions with changeable electroresistance for data storage","authors":"","doi":"10.1016/j.physb.2024.416604","DOIUrl":null,"url":null,"abstract":"<div><div>Ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in the next-generation data storage technologies. In this work, we have grown high-quality LiNbO<sub>3</sub> single crystal films on STO (111) substrates by rotational epitaxy. The certain ferroelectricity was achieved in nanoscale epitaxial LiNbO<sub>3</sub> films. Then, the Au/LiNbO<sub>3</sub>/Nb: SrTiO<sub>3</sub> FTJ was fabricated, and the nonvolatile resistive switching controlled by the nonvolatile polarization switching was observed. The Au/LiNbO<sub>3</sub>/Nb: SrTiO<sub>3</sub> FTJs regulate the quantum tunneling effect through ferroelectric polarization reversal to obtain multi-level resistive states, thereby achieving data storage functionality. At room temperature, the ON/OFF current ratio can exceed 10<sup>3</sup>. Furthermore, the FTJs also exhibit excellent retention for more than 10<sup>3</sup> s and good switching endurance for 2000 cycles. The results suggest the application potential of this LiNbO<sub>3</sub>-based FTJ for next generation nonvolatile ferroelectric memories.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica B-condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921452624009451","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
Ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in the next-generation data storage technologies. In this work, we have grown high-quality LiNbO3 single crystal films on STO (111) substrates by rotational epitaxy. The certain ferroelectricity was achieved in nanoscale epitaxial LiNbO3 films. Then, the Au/LiNbO3/Nb: SrTiO3 FTJ was fabricated, and the nonvolatile resistive switching controlled by the nonvolatile polarization switching was observed. The Au/LiNbO3/Nb: SrTiO3 FTJs regulate the quantum tunneling effect through ferroelectric polarization reversal to obtain multi-level resistive states, thereby achieving data storage functionality. At room temperature, the ON/OFF current ratio can exceed 103. Furthermore, the FTJs also exhibit excellent retention for more than 103 s and good switching endurance for 2000 cycles. The results suggest the application potential of this LiNbO3-based FTJ for next generation nonvolatile ferroelectric memories.
期刊介绍:
Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work.
Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas:
-Magnetism
-Materials physics
-Nanostructures and nanomaterials
-Optics and optical materials
-Quantum materials
-Semiconductors
-Strongly correlated systems
-Superconductivity
-Surfaces and interfaces