A comprehensive numerical investigation on structural stability, mechanical, and optoelectronic properties of HfxSi1‑xO2 tetragonal compounds from the hafnon Family
{"title":"A comprehensive numerical investigation on structural stability, mechanical, and optoelectronic properties of HfxSi1‑xO2 tetragonal compounds from the hafnon Family","authors":"Amira Nour Asfora , Slimane Haid , Mawloud Ould Moussa","doi":"10.1016/j.comptc.2024.114894","DOIUrl":null,"url":null,"abstract":"<div><div>This numerical research explores the structural stability, phonons, electronic, and optical properties of tetragonal Hf<sub>x</sub>Si<sub>1-x</sub>O<sub>2</sub> solid solutions for the rates <em>x</em> = 0.25, 0.5, and 0.75, respectively. During this numerical investigation, the Full-Potential Linearized Augmented Plane Wave method (FP-LAPW) based on the Density Functional Theory (DFT) was employed. Total energy calculations and structure relaxations were carried out using the Perdew-Burke-Ernzerhof Generalized Gradient Approximation (PBE-GGA). For electronic properties, we adopted the Tran-Blaha-modified Becke-Johnson (TB-mBJ) function. According to phonon properties, cohesiveness, and formation energy, these alloys have strong thermodynamic stability and could be produced and synthesized experimentally in a laboratory. The structural parameters are in good agreement with the available results for all compounds. From the electronic properties, HfSi<sub>3</sub>O<sub>8</sub> has a small direct band gap in the Γ<sub>V</sub>-<!--> <!-->Γ<sub>C</sub> direction via GGA approximation, equal to 1.541 eV, indicating that the HfSi<sub>3</sub>O<sub>8</sub> material is one of the future-efficient materials for the solar cell fabrication process. However, HfSiO<sub>4</sub> and Hf<sub>3</sub>SiO<sub>8</sub> exhibit a large indirect band gap in the Γ<sub>V</sub>-M<sub>C</sub> direction, equal to 5.328 eV and 4.284 eV, using GGA approximation, respectively. Motivated by the prospect of using its interesting electronic structure for optoelectronic semiconductor applications, the optical properties of HfSi<sub>3</sub>O<sub>8</sub>, HfSiO<sub>4</sub>, and Hf<sub>3</sub>SiO<sub>8</sub> were studied. This numerical research highlights this material as the first of its kind in terms of optical properties. Given the scarcity of theoretical and experimental data, the current study may be useful for future research on these compounds. Our findings can thus pave the way for further research into the potential use of these oxide compounds in a variety of chemical, physical, and electrical applications aimed at meeting socioeconomic requirements.</div></div>","PeriodicalId":284,"journal":{"name":"Computational and Theoretical Chemistry","volume":"1241 ","pages":"Article 114894"},"PeriodicalIF":3.0000,"publicationDate":"2024-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Computational and Theoretical Chemistry","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2210271X2400433X","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
This numerical research explores the structural stability, phonons, electronic, and optical properties of tetragonal HfxSi1-xO2 solid solutions for the rates x = 0.25, 0.5, and 0.75, respectively. During this numerical investigation, the Full-Potential Linearized Augmented Plane Wave method (FP-LAPW) based on the Density Functional Theory (DFT) was employed. Total energy calculations and structure relaxations were carried out using the Perdew-Burke-Ernzerhof Generalized Gradient Approximation (PBE-GGA). For electronic properties, we adopted the Tran-Blaha-modified Becke-Johnson (TB-mBJ) function. According to phonon properties, cohesiveness, and formation energy, these alloys have strong thermodynamic stability and could be produced and synthesized experimentally in a laboratory. The structural parameters are in good agreement with the available results for all compounds. From the electronic properties, HfSi3O8 has a small direct band gap in the ΓV- ΓC direction via GGA approximation, equal to 1.541 eV, indicating that the HfSi3O8 material is one of the future-efficient materials for the solar cell fabrication process. However, HfSiO4 and Hf3SiO8 exhibit a large indirect band gap in the ΓV-MC direction, equal to 5.328 eV and 4.284 eV, using GGA approximation, respectively. Motivated by the prospect of using its interesting electronic structure for optoelectronic semiconductor applications, the optical properties of HfSi3O8, HfSiO4, and Hf3SiO8 were studied. This numerical research highlights this material as the first of its kind in terms of optical properties. Given the scarcity of theoretical and experimental data, the current study may be useful for future research on these compounds. Our findings can thus pave the way for further research into the potential use of these oxide compounds in a variety of chemical, physical, and electrical applications aimed at meeting socioeconomic requirements.
期刊介绍:
Computational and Theoretical Chemistry publishes high quality, original reports of significance in computational and theoretical chemistry including those that deal with problems of structure, properties, energetics, weak interactions, reaction mechanisms, catalysis, and reaction rates involving atoms, molecules, clusters, surfaces, and bulk matter.