Local Diagnostics of Spin Defects in Irradiated SiC Schottky Diodes

IF 1.4 4区 物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY JETP Letters Pub Date : 2024-10-15 DOI:10.1134/S0021364024602707
K. V. Likhachev, A. M. Skoromokhov, M. V. Uchaev, Yu. A. Uspenskaya, V. V. Kozlovski, M. E. Levinshtein, I. A. Eliseev, A. N. Smirnov, D. D. Kramushchenko, R. A. Babunts, P. G. Baranov
{"title":"Local Diagnostics of Spin Defects in Irradiated SiC Schottky Diodes","authors":"K. V. Likhachev,&nbsp;A. M. Skoromokhov,&nbsp;M. V. Uchaev,&nbsp;Yu. A. Uspenskaya,&nbsp;V. V. Kozlovski,&nbsp;M. E. Levinshtein,&nbsp;I. A. Eliseev,&nbsp;A. N. Smirnov,&nbsp;D. D. Kramushchenko,&nbsp;R. A. Babunts,&nbsp;P. G. Baranov","doi":"10.1134/S0021364024602707","DOIUrl":null,"url":null,"abstract":"<p>The spectra of anticrossing of spin sublevels have been recorded and spin-3/2 color centers have been identified for the first time in commercially available 4H-SiC Schottky diodes irradiated with 0.9-MeV electrons or 15-MeV protons. The effect of the irradiation density on the defect formation has been shown. It has been demonstrated that the increase in the temperature at which proton irradiation is carried out acts as a short-term annealing, leading to a decrease in the concentration of point defects.</p>","PeriodicalId":604,"journal":{"name":"JETP Letters","volume":"120 5","pages":"354 - 359"},"PeriodicalIF":1.4000,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"JETP Letters","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S0021364024602707","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

The spectra of anticrossing of spin sublevels have been recorded and spin-3/2 color centers have been identified for the first time in commercially available 4H-SiC Schottky diodes irradiated with 0.9-MeV electrons or 15-MeV protons. The effect of the irradiation density on the defect formation has been shown. It has been demonstrated that the increase in the temperature at which proton irradiation is carried out acts as a short-term annealing, leading to a decrease in the concentration of point defects.

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辐照碳化硅肖特基二极管自旋缺陷的局部诊断
我们记录了自旋子水平的反交叉光谱,并首次在用 0.9-MeV 电子或 15-MeV 质子辐照的市售 4H-SiC 肖特基二极管中发现了自旋-3/2 色心。研究显示了辐照密度对缺陷形成的影响。实验证明,质子辐照温度的升高会起到短期退火的作用,从而导致点缺陷浓度的降低。
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来源期刊
JETP Letters
JETP Letters 物理-物理:综合
CiteScore
2.40
自引率
30.80%
发文量
164
审稿时长
3-6 weeks
期刊介绍: All topics of experimental and theoretical physics including gravitation, field theory, elementary particles and nuclei, plasma, nonlinear phenomena, condensed matter, superconductivity, superfluidity, lasers, and surfaces.
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