Real-Time MOSFET Condition Monitoring for Variable Mission Profiles With a Dual Extended Kalman Filter

IF 6.5 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Power Electronics Pub Date : 2024-10-14 DOI:10.1109/TPEL.2024.3480704
Martijn Deckers;Leander Van Cappellen;Jens Moschner;Michaël Daenen;Johan Driesen
{"title":"Real-Time MOSFET Condition Monitoring for Variable Mission Profiles With a Dual Extended Kalman Filter","authors":"Martijn Deckers;Leander Van Cappellen;Jens Moschner;Michaël Daenen;Johan Driesen","doi":"10.1109/TPEL.2024.3480704","DOIUrl":null,"url":null,"abstract":"The article proposes a methodology to detect real-time power \n<sc>mosfet</small>\n degradation, in variable mission profile applications, using externally measurable electrical parameters. This complements the work done for fixed operation conditions in current literature. To achieve this, the damage and temperature sensitive drain to source resistance is accompanied with a gate resistance measurement only sensitive to temperature. Together, they allow for the detection of, and the distinction between, bond wire and die attach solder layer degradation. A dual extended Kalman filter is used to filter the measurement data and to estimate the change in thermal model. The article shows the measurement circuits together with proof of concept lab results in a solar photovoltaic use case. The main aim is to show that the resistance measurement can be compensated for mission profile temperature variations and that the thermal resistance can be estimated, reflecting bond wire and die attach solder layer degradation.","PeriodicalId":13267,"journal":{"name":"IEEE Transactions on Power Electronics","volume":"40 1","pages":"2219-2234"},"PeriodicalIF":6.5000,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Power Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10716508/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

The article proposes a methodology to detect real-time power mosfet degradation, in variable mission profile applications, using externally measurable electrical parameters. This complements the work done for fixed operation conditions in current literature. To achieve this, the damage and temperature sensitive drain to source resistance is accompanied with a gate resistance measurement only sensitive to temperature. Together, they allow for the detection of, and the distinction between, bond wire and die attach solder layer degradation. A dual extended Kalman filter is used to filter the measurement data and to estimate the change in thermal model. The article shows the measurement circuits together with proof of concept lab results in a solar photovoltaic use case. The main aim is to show that the resistance measurement can be compensated for mission profile temperature variations and that the thermal resistance can be estimated, reflecting bond wire and die attach solder layer degradation.
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利用双扩展卡尔曼滤波器对可变任务剖面进行实时 MOSFET 状态监测
文章提出了一种方法,利用外部可测量的电气参数,在可变任务曲线应用中实时检测功率 mosfet 退化情况。这是对目前文献中针对固定运行条件所做工作的补充。为了实现这一目标,在测量对损坏和温度敏感的漏极至源极电阻的同时,还测量了仅对温度敏感的栅极电阻。两者结合在一起,就能检测并区分键合线和芯片连接焊接层的劣化。双扩展卡尔曼滤波器用于过滤测量数据和估计热模型的变化。文章展示了测量电路以及太阳能光伏应用案例中的概念验证实验室结果。主要目的是说明电阻测量可对任务轮廓温度变化进行补偿,并可估算热阻,以反映键合线和芯片连接焊料层的退化情况。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics 工程技术-工程:电子与电气
CiteScore
15.20
自引率
20.90%
发文量
1099
审稿时长
3 months
期刊介绍: The IEEE Transactions on Power Electronics journal covers all issues of widespread or generic interest to engineers who work in the field of power electronics. The Journal editors will enforce standards and a review policy equivalent to the IEEE Transactions, and only papers of high technical quality will be accepted. Papers which treat new and novel device, circuit or system issues which are of generic interest to power electronics engineers are published. Papers which are not within the scope of this Journal will be forwarded to the appropriate IEEE Journal or Transactions editors. Examples of papers which would be more appropriately published in other Journals or Transactions include: 1) Papers describing semiconductor or electron device physics. These papers would be more appropriate for the IEEE Transactions on Electron Devices. 2) Papers describing applications in specific areas: e.g., industry, instrumentation, utility power systems, aerospace, industrial electronics, etc. These papers would be more appropriate for the Transactions of the Society which is concerned with these applications. 3) Papers describing magnetic materials and magnetic device physics. These papers would be more appropriate for the IEEE Transactions on Magnetics. 4) Papers on machine theory. These papers would be more appropriate for the IEEE Transactions on Power Systems. While original papers of significant technical content will comprise the major portion of the Journal, tutorial papers and papers of historical value are also reviewed for publication.
期刊最新文献
The Premier Place to Publish the Latest Research in Power Electronics Administrative Committee Information IEEE: Fostering technological innovation for the benefit of humanity IEEE Power Electronics Society Information Administrative Committee Information
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