Menghao Bi, Xiang Li, Zhe Wang, Ruiyang Chen, Leichuang Zhu, Zhengxiao Du, Cheng Zhang, Yongping Du, Fang Wu
{"title":"Modulation of Semiconductor Doping of 2D GeSe in h-BN/GeSe van der Waals Heterostructure","authors":"Menghao Bi, Xiang Li, Zhe Wang, Ruiyang Chen, Leichuang Zhu, Zhengxiao Du, Cheng Zhang, Yongping Du, Fang Wu","doi":"10.1021/acs.jpcc.4c05079","DOIUrl":null,"url":null,"abstract":"Herein, a novel controllable and nondestructive semiconductor doping technique is proposed by introducing defects in the h-BN/GeSe van der Waals heterostructure. A perfect n-/p-type channel layer can be achieved through charge transfer between the defective h-BN substrate layer and the GeSe channel layer. The effect of this modulation doping strategy on the carrier mobility of the channel layers is also investigated. In the case of the h-BN/GeSe heterostructure with the introduction of boron vacancies, the electron mobility of 2D GeSe in the <i>x</i> (<i>y</i>) direction is 1479.11 (1343.95) cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, and the hole mobility in the <i>x</i> (<i>y</i>) direction is 1031.88 (864.44) cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>. As for producing nitrogen vacancies in the h-BN/GeSe heterostructure, the electron mobility of 2D GeSe in the <i>x</i> (<i>y</i>) direction is predicted to be as high as 1643.77 (1678.14) cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, and the hole mobility in the <i>x</i> (<i>y</i>) direction is about 1129.51 (1563.50) cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, respectively. In contrast, the electron (hole) mobility in the <i>x</i>-direction is dramatically decreased to 705.29 (630.85) cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>, and the electron (hole) mobility in the <i>y</i>-direction is only 701.40 (481.37) cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> for the GeSe layer by using the traditional semiconductor doping method. The nondestructive doping strategy provides an effective method to modulate two-dimensional semiconductor channel materials while avoiding lattice damage, thus resulting in much higher carrier mobility. It indicates that the novel semiconductor doping technique has a great promising application in electronic and optoelectronic devices.","PeriodicalId":61,"journal":{"name":"The Journal of Physical Chemistry C","volume":null,"pages":null},"PeriodicalIF":3.3000,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Journal of Physical Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://doi.org/10.1021/acs.jpcc.4c05079","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Herein, a novel controllable and nondestructive semiconductor doping technique is proposed by introducing defects in the h-BN/GeSe van der Waals heterostructure. A perfect n-/p-type channel layer can be achieved through charge transfer between the defective h-BN substrate layer and the GeSe channel layer. The effect of this modulation doping strategy on the carrier mobility of the channel layers is also investigated. In the case of the h-BN/GeSe heterostructure with the introduction of boron vacancies, the electron mobility of 2D GeSe in the x (y) direction is 1479.11 (1343.95) cm2 V–1 s–1, and the hole mobility in the x (y) direction is 1031.88 (864.44) cm2 V–1 s–1. As for producing nitrogen vacancies in the h-BN/GeSe heterostructure, the electron mobility of 2D GeSe in the x (y) direction is predicted to be as high as 1643.77 (1678.14) cm2 V–1 s–1, and the hole mobility in the x (y) direction is about 1129.51 (1563.50) cm2 V–1 s–1, respectively. In contrast, the electron (hole) mobility in the x-direction is dramatically decreased to 705.29 (630.85) cm2 V–1 s–1, and the electron (hole) mobility in the y-direction is only 701.40 (481.37) cm2 V–1 s–1 for the GeSe layer by using the traditional semiconductor doping method. The nondestructive doping strategy provides an effective method to modulate two-dimensional semiconductor channel materials while avoiding lattice damage, thus resulting in much higher carrier mobility. It indicates that the novel semiconductor doping technique has a great promising application in electronic and optoelectronic devices.
期刊介绍:
The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.