Parylene-MoOx crossbar memristors as a volatile reservoir and non-volatile readout: a homogeneous reservoir computing system.

IF 5.8 3区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Nanoscale Pub Date : 2024-11-13 DOI:10.1039/d4nr03368j
Margarita A Ryabova, Anna N Matsukatova, Andrey V Emelyanov, Alexander A Nesmelov, Timofey D Patsaev, Vyacheslav A Demin
{"title":"Parylene-MoO<sub><i>x</i></sub> crossbar memristors as a volatile reservoir and non-volatile readout: a homogeneous reservoir computing system.","authors":"Margarita A Ryabova, Anna N Matsukatova, Andrey V Emelyanov, Alexander A Nesmelov, Timofey D Patsaev, Vyacheslav A Demin","doi":"10.1039/d4nr03368j","DOIUrl":null,"url":null,"abstract":"<p><p>From the very beginning, the emulation of biological principles has been the primary avenue for the development of energy-efficient artificial intelligence systems. Reservoir computing, which has a solid biological basis, is particularly appealing due to its simplicity and efficiency. So-called memristors, resistive switching elements with complex dynamics, have proved beneficial for replicating both principal parts of a reservoir computing system. However, these parts require distinct behaviors found in differing memristive structures. The development of a homogeneous memristive reservoir computing system will significantly facilitate and reduce the fabrication process cost. The following work employs the co-existence of volatile and non-volatile regimes in parylene-MoO<sub><i>x</i></sub> crossbar memristors controlled by compliance current for this aim. The stable operation of the memristors under study is confirmed by low cycle-to-cycle and device-to-device variations of the switching voltages. For the transition between the volatile and non-volatile regimes, factors such as compliance current and reading voltage along with possible intrinsic origins are discussed. The results provide a foundation for the future hardware development of a homogeneous parylene-based reservoir computing system, considering high MNIST dataset classification accuracy (∼96%).</p>","PeriodicalId":92,"journal":{"name":"Nanoscale","volume":null,"pages":null},"PeriodicalIF":5.8000,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1039/d4nr03368j","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

From the very beginning, the emulation of biological principles has been the primary avenue for the development of energy-efficient artificial intelligence systems. Reservoir computing, which has a solid biological basis, is particularly appealing due to its simplicity and efficiency. So-called memristors, resistive switching elements with complex dynamics, have proved beneficial for replicating both principal parts of a reservoir computing system. However, these parts require distinct behaviors found in differing memristive structures. The development of a homogeneous memristive reservoir computing system will significantly facilitate and reduce the fabrication process cost. The following work employs the co-existence of volatile and non-volatile regimes in parylene-MoOx crossbar memristors controlled by compliance current for this aim. The stable operation of the memristors under study is confirmed by low cycle-to-cycle and device-to-device variations of the switching voltages. For the transition between the volatile and non-volatile regimes, factors such as compliance current and reading voltage along with possible intrinsic origins are discussed. The results provide a foundation for the future hardware development of a homogeneous parylene-based reservoir computing system, considering high MNIST dataset classification accuracy (∼96%).

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作为易失性贮存器和非易失性读出器的对二甲苯-氧化钼横条忆阻器:同质贮存器计算系统。
从一开始,模拟生物原理就是开发高能效人工智能系统的主要途径。具有坚实生物学基础的存储计算因其简单高效而特别吸引人。所谓的忆阻器(memristors)是一种具有复杂动态特性的电阻开关元件,已被证明有利于复制水库计算系统的两个主要部分。然而,这些部分需要不同忆阻器结构中的不同行为。开发同质忆阻器水库计算系统将极大地促进并降低制造工艺成本。为实现这一目标,下面的工作采用了由顺应电流控制的对二甲苯-氧化钼横条忆阻器的易失性和非易失性共存机制。所研究的忆阻器的稳定运行得到了周期与周期之间以及器件与器件之间的低开关电压变化的证实。对于易失性和非易失性状态之间的转换,讨论了顺应电流和读取电压等因素以及可能的内在原因。考虑到较高的 MNIST 数据集分类准确率(96%),研究结果为未来基于对二甲苯的同质存储计算系统的硬件开发奠定了基础。
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来源期刊
Nanoscale
Nanoscale CHEMISTRY, MULTIDISCIPLINARY-NANOSCIENCE & NANOTECHNOLOGY
CiteScore
12.10
自引率
3.00%
发文量
1628
审稿时长
1.6 months
期刊介绍: Nanoscale is a high-impact international journal, publishing high-quality research across nanoscience and nanotechnology. Nanoscale publishes a full mix of research articles on experimental and theoretical work, including reviews, communications, and full papers.Highly interdisciplinary, this journal appeals to scientists, researchers and professionals interested in nanoscience and nanotechnology, quantum materials and quantum technology, including the areas of physics, chemistry, biology, medicine, materials, energy/environment, information technology, detection science, healthcare and drug discovery, and electronics.
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