[Investigation of Coupling Effect for Adjacent Orthopedic Implants on MRI Radio-Frequency Heating].

Ran Guo, Zhichao Wang, Jing Wang, Chengling Li, Yonghua Li, Sheng Hu
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Abstract

This paper investigates the mechanism of radio-frequency (RF) heating that occurs when two adjacent orthopedic implants are present together under magnetic resonance imaging (MRI) at 1.5 Tesla and 3.0 Tesla. When a patient has multiple implants close to each other, interactions between the implants may increase RF heating. Typical generic interlocking plate and antibiotic nail implants are adopted as examples. To analyze the effect of adjacent implants, the amplitude and direction of incident and scattering vector electric fields at the hot spot position are calculated and extracted using numerical simulation based on Huygens principle. It is shown that a strong coupling effect occurs due to the existence of both the incident field and a strong scattering field. Huygens principle can be used to obtain the first and second order scattering fields generated between implants. If the first- and second-order electric field terms are summed within a certain region, the RF-induced heating of this dual-implant system increases.

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[相邻骨科植入物对核磁共振射频加热的耦合效应研究]。
本文研究了在 1.5 特斯拉和 3.0 特斯拉磁共振成像(MRI)下,当两个相邻的骨科植入物同时存在时发生射频(RF)加热的机制。当患者的多个植入体相互靠近时,植入体之间的相互作用可能会增加射频加热。我们以典型的通用互锁板和抗生素钉植入物为例。为了分析相邻植入体的影响,根据惠更斯原理,利用数值模拟计算并提取了热点位置的入射和散射矢量电场的振幅和方向。结果表明,由于同时存在入射场和强散射场,因此会产生强耦合效应。惠更斯原理可用于获得植入体之间产生的一阶和二阶散射场。如果一阶和二阶电场项在一定区域内相加,则该双种植体系统的射频诱导加热会增加。
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来源期刊
中国医疗器械杂志
中国医疗器械杂志 Medicine-Medicine (all)
CiteScore
0.40
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发文量
8086
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