Hao Liu , Chen Jiang , Shuaicheng Liu , Jihong Ye , Hao Zhai , Jian Li , Jun Wang , Qi Wang , Xin Wei , Xiaomin Ren
{"title":"Reducing dislocations for room-temperature continuous-wave InGaAs/AlGaAs multiple quantum well lasers monolithically grown on Si","authors":"Hao Liu , Chen Jiang , Shuaicheng Liu , Jihong Ye , Hao Zhai , Jian Li , Jun Wang , Qi Wang , Xin Wei , Xiaomin Ren","doi":"10.1016/j.optcom.2024.131214","DOIUrl":null,"url":null,"abstract":"<div><div>As dislocation-sensitive light-emitting devices, quantum well lasers monolithically grown on Si substrates operate poorly compared to their counterparts on native ones. In this work, a GaAs/Si virtual substrate with a low threading dislocation density of 8.9 × 10<sup>6</sup>/cm<sup>2</sup> was achieved by using a combined dislocation-reducing method. Meanwhile, by using two In-containing strained layer separately inserted into upper and lower AlGaAs cladding layers, the active region was virtually free of gliding dislocations. With the reduced dislocations in the active region, the fabricated Si-based broad-stripe ridged lasers exhibited continuous-wave lasing at room temperature, and a low threshold current density of 1015 A/cm<sup>2</sup>, high operation temperature of 90 °C as well as a device lifetime of over 87.25 h were achieved. These results demonstrate an experimentally feasible way to optimize a Si-based InGaAs/AlGaAs quantum well laser and further promote the research on monolithic integration.</div></div>","PeriodicalId":19586,"journal":{"name":"Optics Communications","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optics Communications","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0030401824009519","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
As dislocation-sensitive light-emitting devices, quantum well lasers monolithically grown on Si substrates operate poorly compared to their counterparts on native ones. In this work, a GaAs/Si virtual substrate with a low threading dislocation density of 8.9 × 106/cm2 was achieved by using a combined dislocation-reducing method. Meanwhile, by using two In-containing strained layer separately inserted into upper and lower AlGaAs cladding layers, the active region was virtually free of gliding dislocations. With the reduced dislocations in the active region, the fabricated Si-based broad-stripe ridged lasers exhibited continuous-wave lasing at room temperature, and a low threshold current density of 1015 A/cm2, high operation temperature of 90 °C as well as a device lifetime of over 87.25 h were achieved. These results demonstrate an experimentally feasible way to optimize a Si-based InGaAs/AlGaAs quantum well laser and further promote the research on monolithic integration.
期刊介绍:
Optics Communications invites original and timely contributions containing new results in various fields of optics and photonics. The journal considers theoretical and experimental research in areas ranging from the fundamental properties of light to technological applications. Topics covered include classical and quantum optics, optical physics and light-matter interactions, lasers, imaging, guided-wave optics and optical information processing. Manuscripts should offer clear evidence of novelty and significance. Papers concentrating on mathematical and computational issues, with limited connection to optics, are not suitable for publication in the Journal. Similarly, small technical advances, or papers concerned only with engineering applications or issues of materials science fall outside the journal scope.