Enhancing stability of double perovskite electrode by vanadium doping for symmetrical solid oxide cell

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Science and Engineering B-advanced Functional Solid-state Materials Pub Date : 2024-10-20 DOI:10.1016/j.mseb.2024.117769

Ao Wang , Gang Li , Cheng Li , Yujie Tang , Dong Yan , Jian Li , Lichao Jia

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Abstract

Using solid oxide cells to produce and utilize hydrogen is an effective method for addressing energy demands. In this study, vanadium (V) was doped into the B site of the La_0.3Sr_1.7Fe_1.3Ni_0.2Mo_0.5O_6-δ double perovskite, which served as the electrode material for symmetrical solid oxide cells. Doping with high-valence V⁴⁺/V⁵⁺ reduced both the average Fe valence state and the concentration of oxygen vacancies, while simultaneously decreasing the reducing activity of the material and enhancing its stability. After operating at 750 °C and ± 400 mA cm⁻² for 150 h, the degradation rates for Cell-LSFNM were 4.56 % and 8.32 %, respectively, while those for Cell-LSFVNM were only 0 % and 3.32 %, respectively. Although V doping slightly diminished the electrochemical performance of the single cell, it significantly improved long-term operational stability in solid oxide fuel/electrolysis cell (SOFC/SOEC) modes.

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通过掺杂钒提高对称固体氧化物电池双过氧化物电极的稳定性

利用固体氧化物电池生产和利用氢气是解决能源需求的有效方法。在这项研究中，钒（V）被掺杂到了 La0.3Sr1.7Fe1.3Ni0.2Mo0.5O6-δ 双包晶石的 B 位，作为对称固体氧化物电池的电极材料。高价态 V4+/V5+ 的掺杂降低了铁的平均价态和氧空位的浓度，同时降低了材料的还原活性并增强了其稳定性。在 750 °C 和 ± 400 mA cm-2 下工作 150 小时后，Cell-LSFNM 的降解率分别为 4.56 % 和 8.32 %，而 Cell-LSFVNM 的降解率仅为 0 % 和 3.32 %。虽然掺杂 V 会略微降低单电池的电化学性能，但却能显著提高固体氧化物燃料/电解电池（SOFC/SOEC）模式下的长期运行稳定性。

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来源期刊

Materials Science and Engineering B-advanced Functional Solid-state Materials 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.