{"title":"Risk Assessment of Deep Brain Stimulator Implant Against Incident Lightning Electromagnetic Radiation","authors":"Anjitha V;Sunitha K","doi":"10.1109/TEMC.2024.3482170","DOIUrl":null,"url":null,"abstract":"Deep brain stimulators (DBSs) have several therapeutic uses, including the treatment of movement and nonmovement disorders, and hence the global market for DBS implants is growing. Nevertheless, research has demonstrated that external electromagnetic fields interact with these implants within the human body, leading to variations in their operational state; several examples of these interactions have already been measured. However, clinical journal case studies have revealed that lightning strikes have notable consequences on active implants that have not yet been measured. Hence this article attempts to quantify the response of DBS implants when exposed to lightning electromagnetic fields (LEMFs). The field penetration into a homogeneous human body in and around the implant is quantified and undesirable variations in the stimulus output of DBS is measured. For a vicinity lightning strike at 10 m, peak value of penetrated electric field strength is computed to be 3.61 kV/cm and a magnetic field strength of 4.81 A/cm. Also an impulse current of 2 mA peak gets coupled along with the real time stimulus current pulse output of DBS, thus causing unbalanced charge injection into human tissue. Further study on various lightning strike distance affirmed an ineffective shielding of the implant and undesirable pick up of LEMF impulse by implant lead electrode.","PeriodicalId":55012,"journal":{"name":"IEEE Transactions on Electromagnetic Compatibility","volume":"67 1","pages":"72-81"},"PeriodicalIF":2.5000,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electromagnetic Compatibility","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/10741164/","RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Deep brain stimulators (DBSs) have several therapeutic uses, including the treatment of movement and nonmovement disorders, and hence the global market for DBS implants is growing. Nevertheless, research has demonstrated that external electromagnetic fields interact with these implants within the human body, leading to variations in their operational state; several examples of these interactions have already been measured. However, clinical journal case studies have revealed that lightning strikes have notable consequences on active implants that have not yet been measured. Hence this article attempts to quantify the response of DBS implants when exposed to lightning electromagnetic fields (LEMFs). The field penetration into a homogeneous human body in and around the implant is quantified and undesirable variations in the stimulus output of DBS is measured. For a vicinity lightning strike at 10 m, peak value of penetrated electric field strength is computed to be 3.61 kV/cm and a magnetic field strength of 4.81 A/cm. Also an impulse current of 2 mA peak gets coupled along with the real time stimulus current pulse output of DBS, thus causing unbalanced charge injection into human tissue. Further study on various lightning strike distance affirmed an ineffective shielding of the implant and undesirable pick up of LEMF impulse by implant lead electrode.
脑深部刺激器(DBSs)有多种治疗用途,包括治疗运动和非运动障碍,因此DBS植入物的全球市场正在增长。然而,研究表明,外部电磁场与这些植入物在人体内相互作用,导致其工作状态的变化;这些相互作用的几个例子已经被测量过了。然而,临床期刊案例研究显示,雷击对活性植入物有显著影响,但尚未测量。因此,本文试图量化DBS植入物暴露于闪电电磁场(LEMFs)时的反应。对植入物内部和周围均匀的人体的场渗透进行了量化,并测量了DBS刺激输出的不良变化。在10 m附近雷击时,击穿电场强度峰值为3.61 kV/cm,磁场强度峰值为4.81 a /cm。在DBS实时刺激电流脉冲输出的同时,还耦合了峰值为2ma的脉冲电流,从而导致人体组织中的电荷注入不平衡。对不同雷击距离的进一步研究证实了假体屏蔽效果不佳,假体铅电极对LEMF脉冲的拾取效果不佳。
期刊介绍:
IEEE Transactions on Electromagnetic Compatibility publishes original and significant contributions related to all disciplines of electromagnetic compatibility (EMC) and relevant methods to predict, assess and prevent electromagnetic interference (EMI) and increase device/product immunity. The scope of the publication includes, but is not limited to Electromagnetic Environments; Interference Control; EMC and EMI Modeling; High Power Electromagnetics; EMC Standards, Methods of EMC Measurements; Computational Electromagnetics and Signal and Power Integrity, as applied or directly related to Electromagnetic Compatibility problems; Transmission Lines; Electrostatic Discharge and Lightning Effects; EMC in Wireless and Optical Technologies; EMC in Printed Circuit Board and System Design.