Risk Assessment of Deep Brain Stimulator Implant Against Incident Lightning Electromagnetic Radiation

IF 2.5 3区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electromagnetic Compatibility Pub Date : 2024-11-01 DOI:10.1109/TEMC.2024.3482170
Anjitha V;Sunitha K
{"title":"Risk Assessment of Deep Brain Stimulator Implant Against Incident Lightning Electromagnetic Radiation","authors":"Anjitha V;Sunitha K","doi":"10.1109/TEMC.2024.3482170","DOIUrl":null,"url":null,"abstract":"Deep brain stimulators (DBSs) have several therapeutic uses, including the treatment of movement and nonmovement disorders, and hence the global market for DBS implants is growing. Nevertheless, research has demonstrated that external electromagnetic fields interact with these implants within the human body, leading to variations in their operational state; several examples of these interactions have already been measured. However, clinical journal case studies have revealed that lightning strikes have notable consequences on active implants that have not yet been measured. Hence this article attempts to quantify the response of DBS implants when exposed to lightning electromagnetic fields (LEMFs). The field penetration into a homogeneous human body in and around the implant is quantified and undesirable variations in the stimulus output of DBS is measured. For a vicinity lightning strike at 10 m, peak value of penetrated electric field strength is computed to be 3.61 kV/cm and a magnetic field strength of 4.81 A/cm. Also an impulse current of 2 mA peak gets coupled along with the real time stimulus current pulse output of DBS, thus causing unbalanced charge injection into human tissue. Further study on various lightning strike distance affirmed an ineffective shielding of the implant and undesirable pick up of LEMF impulse by implant lead electrode.","PeriodicalId":55012,"journal":{"name":"IEEE Transactions on Electromagnetic Compatibility","volume":"67 1","pages":"72-81"},"PeriodicalIF":2.5000,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electromagnetic Compatibility","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/10741164/","RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Deep brain stimulators (DBSs) have several therapeutic uses, including the treatment of movement and nonmovement disorders, and hence the global market for DBS implants is growing. Nevertheless, research has demonstrated that external electromagnetic fields interact with these implants within the human body, leading to variations in their operational state; several examples of these interactions have already been measured. However, clinical journal case studies have revealed that lightning strikes have notable consequences on active implants that have not yet been measured. Hence this article attempts to quantify the response of DBS implants when exposed to lightning electromagnetic fields (LEMFs). The field penetration into a homogeneous human body in and around the implant is quantified and undesirable variations in the stimulus output of DBS is measured. For a vicinity lightning strike at 10 m, peak value of penetrated electric field strength is computed to be 3.61 kV/cm and a magnetic field strength of 4.81 A/cm. Also an impulse current of 2 mA peak gets coupled along with the real time stimulus current pulse output of DBS, thus causing unbalanced charge injection into human tissue. Further study on various lightning strike distance affirmed an ineffective shielding of the implant and undesirable pick up of LEMF impulse by implant lead electrode.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
深部脑刺激器植入体对雷电电磁辐射的风险评估
脑深部刺激器(DBSs)有多种治疗用途,包括治疗运动和非运动障碍,因此DBS植入物的全球市场正在增长。然而,研究表明,外部电磁场与这些植入物在人体内相互作用,导致其工作状态的变化;这些相互作用的几个例子已经被测量过了。然而,临床期刊案例研究显示,雷击对活性植入物有显著影响,但尚未测量。因此,本文试图量化DBS植入物暴露于闪电电磁场(LEMFs)时的反应。对植入物内部和周围均匀的人体的场渗透进行了量化,并测量了DBS刺激输出的不良变化。在10 m附近雷击时,击穿电场强度峰值为3.61 kV/cm,磁场强度峰值为4.81 a /cm。在DBS实时刺激电流脉冲输出的同时,还耦合了峰值为2ma的脉冲电流,从而导致人体组织中的电荷注入不平衡。对不同雷击距离的进一步研究证实了假体屏蔽效果不佳,假体铅电极对LEMF脉冲的拾取效果不佳。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
4.80
自引率
19.00%
发文量
235
审稿时长
2.3 months
期刊介绍: IEEE Transactions on Electromagnetic Compatibility publishes original and significant contributions related to all disciplines of electromagnetic compatibility (EMC) and relevant methods to predict, assess and prevent electromagnetic interference (EMI) and increase device/product immunity. The scope of the publication includes, but is not limited to Electromagnetic Environments; Interference Control; EMC and EMI Modeling; High Power Electromagnetics; EMC Standards, Methods of EMC Measurements; Computational Electromagnetics and Signal and Power Integrity, as applied or directly related to Electromagnetic Compatibility problems; Transmission Lines; Electrostatic Discharge and Lightning Effects; EMC in Wireless and Optical Technologies; EMC in Printed Circuit Board and System Design.
期刊最新文献
Efficient Assessment of Lightning Outages in Transmission Lines Using Surrogate Models Efficient Approach for Electromagnetic Radiation Sources Modeling Based on Fourier Transform of Near Magnetic Field Measurements A Phaseless Source Reconstruction Method Based on a Multipopulation Differential Evolution Algorithm With Divided Strategies and Dynamic Adjustment A Power-Sensitive Feature Index Model-Based Method for EMC Prediction of GPS Receivers Kernel-Enhanced Deep Learning for Temperature-Dependent Electromagnetic Susceptibility Modeling of Analog Sensors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1