{"title":"Effect of passivation layers in bilayer with ZrO2 on Ge substrate for improved thermal stability","authors":"Byoungjun Won, Geun-Ha Oh, Il-Kwon Oh","doi":"10.1007/s10853-024-10309-z","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, the effects of Al<sub>2</sub>O<sub>3</sub> and Y<sub>2</sub>O<sub>3</sub> passivation layers on Ge substrates are investigated to enhance the thermal stability of Ge-based devices. Using X-ray photoelectron spectroscopy, we analyze the growth characteristics and chemical composition of Al<sub>2</sub>O<sub>3</sub>, Y<sub>2</sub>O<sub>3</sub>, and ZrO<sub>2</sub> on Ge. The changes in the crystallinity of ZrO<sub>2</sub> on different substrates of Ge, Al<sub>2</sub>O<sub>3</sub>/Ge, and Y<sub>2</sub>O<sub>3</sub>/Ge configurations are observed via X-ray diffraction. Material properties, including capacitance, flat band voltage shift (Δ<i>V</i><sub>FB</sub>), oxide charge trap (<i>N</i><sub>ot</sub>), interface defect density (<i>D</i><sub>it</sub>), and leakage current, are analyzed using the metal–oxide–semiconductor capacitor, with a particular focus on their electrical characteristics. Additionally, we investigate whether the passivation mechanisms of each material are more suitable for enhancing thermal stability. Overall, this study provides insight into the role of passivation layers in improving the interface and thermal stability of Ge-based devices, offering valuable contributions to the advancement of semiconductor technology.</p><h3>Graphical abstract</h3>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":645,"journal":{"name":"Journal of Materials Science","volume":"59 41","pages":"19584 - 19595"},"PeriodicalIF":3.5000,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s10853-024-10309-z","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, the effects of Al2O3 and Y2O3 passivation layers on Ge substrates are investigated to enhance the thermal stability of Ge-based devices. Using X-ray photoelectron spectroscopy, we analyze the growth characteristics and chemical composition of Al2O3, Y2O3, and ZrO2 on Ge. The changes in the crystallinity of ZrO2 on different substrates of Ge, Al2O3/Ge, and Y2O3/Ge configurations are observed via X-ray diffraction. Material properties, including capacitance, flat band voltage shift (ΔVFB), oxide charge trap (Not), interface defect density (Dit), and leakage current, are analyzed using the metal–oxide–semiconductor capacitor, with a particular focus on their electrical characteristics. Additionally, we investigate whether the passivation mechanisms of each material are more suitable for enhancing thermal stability. Overall, this study provides insight into the role of passivation layers in improving the interface and thermal stability of Ge-based devices, offering valuable contributions to the advancement of semiconductor technology.
期刊介绍:
The Journal of Materials Science publishes reviews, full-length papers, and short Communications recording original research results on, or techniques for studying the relationship between structure, properties, and uses of materials. The subjects are seen from international and interdisciplinary perspectives covering areas including metals, ceramics, glasses, polymers, electrical materials, composite materials, fibers, nanostructured materials, nanocomposites, and biological and biomedical materials. The Journal of Materials Science is now firmly established as the leading source of primary communication for scientists investigating the structure and properties of all engineering materials.