{"title":"Highly-enhanced gas-sensing performance of metal-doped In2O3 microtubes from acceptor doping and double surface adsorption","authors":"","doi":"10.1016/j.mseb.2024.117784","DOIUrl":null,"url":null,"abstract":"<div><div>The different valent metal-doping is a feasible and convenient way to adjust the microstructures and electron concentration of In<sub>2</sub>O<sub>3</sub> gas sensors. In this paper, the different valence metals (Zn<sup>2+</sup>, Sb<sup>3+</sup>, Zr<sup>4+</sup> and Nb<sup>5+</sup>) are doped into MIL-68 (In) metal–organic frameworks (MOFs) by solvothermal method, and then In<sub>2</sub>O<sub>3</sub> and metal-doped In<sub>2</sub>O<sub>3</sub> microtubes are obtained by pyrolysis MIL-68 MOFs. All samples exhibit the similar microtubular structures, indicating oxygen adsorption on both inner and outer surface. The average grain size of metal-doped In<sub>2</sub>O<sub>3</sub> microtubes decreases a little while the specific surface area increases greatly. Metal-doping greatly affects the formaldehyde gas-sensing performance, and Zn<sup>2+</sup>-doped In<sub>2</sub>O<sub>3</sub> sensor presents the highest response value (188.56), shortest response/recovery times and excellent selectivity to formaldehyde gas at 210 ℃. Compared the microstructural and gas-sensing parameters of In<sub>2</sub>O<sub>3</sub> sensor, the specific surface area and oxygen vacancies of metal-doped In<sub>2</sub>O<sub>3</sub> sensors enhance the surface <span><math><msup><mrow><mi>O</mi></mrow><mo>-</mo></msup></math></span>. Moreover, acceptor Zn<sup>2+</sup>-doping directly extracts electrons from conduction band of Zn<sup>2+</sup>-doped In<sub>2</sub>O<sub>3</sub> sensor, which greatly increases the resistance in air and the thickness of electron deletion layer for Zn<sup>2+</sup>-doped In<sub>2</sub>O<sub>3</sub> sensor.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering B-advanced Functional Solid-state Materials","volume":null,"pages":null},"PeriodicalIF":3.9000,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering B-advanced Functional Solid-state Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510724006135","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The different valent metal-doping is a feasible and convenient way to adjust the microstructures and electron concentration of In2O3 gas sensors. In this paper, the different valence metals (Zn2+, Sb3+, Zr4+ and Nb5+) are doped into MIL-68 (In) metal–organic frameworks (MOFs) by solvothermal method, and then In2O3 and metal-doped In2O3 microtubes are obtained by pyrolysis MIL-68 MOFs. All samples exhibit the similar microtubular structures, indicating oxygen adsorption on both inner and outer surface. The average grain size of metal-doped In2O3 microtubes decreases a little while the specific surface area increases greatly. Metal-doping greatly affects the formaldehyde gas-sensing performance, and Zn2+-doped In2O3 sensor presents the highest response value (188.56), shortest response/recovery times and excellent selectivity to formaldehyde gas at 210 ℃. Compared the microstructural and gas-sensing parameters of In2O3 sensor, the specific surface area and oxygen vacancies of metal-doped In2O3 sensors enhance the surface . Moreover, acceptor Zn2+-doping directly extracts electrons from conduction band of Zn2+-doped In2O3 sensor, which greatly increases the resistance in air and the thickness of electron deletion layer for Zn2+-doped In2O3 sensor.
期刊介绍:
The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.