Surface topology, bandgap evaluation, and photoluminescence characteristics of Bi2O3-B2O3-Cr2O3: ZrO2 glass ceramics for visible light devices

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Science and Engineering B-advanced Functional Solid-state Materials Pub Date : 2024-11-01 DOI:10.1016/j.mseb.2024.117781
Adepu Navalika , Linganaboina Srinivasa Rao , Tumu Venkatappa Rao , Shamima Hussain , Sujay Chakravarty
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Abstract

Bismuth-borate-chromium oxide glass ceramics containing small concentrations of ZrO2 nanoparticles were synthesized. The AFM images showed uneven grains with crystal stripes of size ≈30-70 nm on surface of the glass ceramic samples. The optical bandgap (Eo) was determined in the range of 2.7 – 3.5 eV, using three different methods viz., Tauc, ASF, and DASF methods. The Tanabe-Sugano diagram has revealed that the Cr3+ ions were presented in the strong crystal field with DqB  > 2.3. Photoluminescence spectra have revealed two emission bands by 2T2g(F) → 4A2g(F) (green emission) and 2Eg(F) → 4A2g(G) (red emission) transitions of Cr3+ ions. The (x, y) coordinates in the CIE diagram were shifted from green to orange region as the concentration of ZrO2 nanoparticles has increased gradually. These glass ceramics may act as active laser media or LED sources for practical applications in visible band, especially green-yellow-orange band.

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Bi2O3-B2O3-Cr2O3 的表面拓扑、带隙评估和光致发光特性:用于可见光器件的 ZrO2 玻璃陶瓷
合成了含有少量 ZrO2 纳米粒子的铋硼铬氧化物玻璃陶瓷。原子力显微镜图像显示,玻璃陶瓷样品表面有大小为≈30-70 nm的晶体条纹。使用陶克法、ASF 法和 DASF 法这三种不同的方法测定了 2.7 - 3.5 eV 范围内的光带隙(Eo)。Tanabe-Sugano 图显示,Cr3+ 离子处于强晶场中,DqB > 2.3。光致发光光谱显示了 Cr3+ 离子的 2T2g(F)→4A2g(F)(绿色发射)和 2Eg(F)→4A2g(G)(红色发射)跃迁的两个发射带。随着 ZrO2 纳米粒子浓度的逐渐增加,CIE 图中的 (x, y) 坐标从绿色区域移动到橙色区域。这些玻璃陶瓷可作为有源激光介质或 LED 光源在可见光波段(尤其是绿-黄-橙波段)进行实际应用。
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来源期刊
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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