Promotion of Mo-based Ionic Crystal Precursor for MoS2 Wafer Growth

IF 5.8 3区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Nanoscale Pub Date : 2024-11-06 DOI:10.1039/d4nr02955k
Jinxiu Liu, Chunchi Zhang, Yan Huang, Haijuan Wu, Chao Tan, Zegao Wang
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Abstract

Two-dimensional MoS2 semiconductor has been considered as the promising ingenious solution to extension Moore's law. However, its wafer-scale growth from lab to fab is still in the fancy stages in the field of chip industry. The distribution, concentration and activity of the sulfur-precursor and molybdenum-precursor significantly affect the MoS2 wafter uniform including its grain size, thickness and vacancy. Although the sulfur-precursor has gained much attention, for example, the sulfur source generated from ZnS facilitates the MoS2 growth, the effect of molybdenum-precursor and its growth mechanism is still unclear. In this study, we studied the influence of covalent/ionic molybdenum precursors starting from the principle of chemical vapor deposition and looking for a universal wafer synthesis path. It is found that the reaction speed of Na2MoO4 as a typical ion precursor is very favourable for wafer growth defect control and surface homogeneity compared with MoO3 as a typical covalent precursor. The evaporated [MoO4]2- ion with the smallest cluster has high activity which can easily realize the uniform control of the MoS2 wafer. In addition, the 2-inch monolayer MoS2 film can be grown in the growth time range of 3-5 minutes using ion precursors, which can achieve a mobility of 12 cm2V-1 s -1and maximum IOn/IOff ratio of 9.87×109. This study insights the MoS2 wafer growth mechanism and facilitates the development of a MoS2-based electronics system.
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促进 MoS2 硅片生长的 Mo 基离子晶体前驱体
二维 MoS2 半导体一直被认为是有望延长摩尔定律的巧妙解决方案。然而,在芯片工业领域,其从实验室到工厂的晶圆级发展仍处于雏形阶段。硫前驱体和钼前驱体的分布、浓度和活性极大地影响着 MoS2 晶圆的均匀性,包括其晶粒尺寸、厚度和空位。虽然硫前驱体受到了广泛关注,例如 ZnS 产生的硫源促进了 MoS2 的生长,但钼前驱体的影响及其生长机制仍不清楚。在本研究中,我们从化学气相沉积原理出发,研究了共价/离子钼前驱体的影响,并寻找了一条通用的晶片合成路径。研究发现,与典型的共价前驱体 MoO3 相比,典型的离子前驱体 Na2MoO4 的反应速度对晶圆生长缺陷控制和表面均匀性非常有利。蒸发出的[MoO4]2-离子具有最小的团簇,活性高,很容易实现对 MoS2 硅片的均匀控制。此外,利用离子前驱体可在 3-5 分钟的生长时间范围内生长出 2 英寸的单层 MoS2 薄膜,其迁移率可达 12 cm2V-1 s -1 ,最大 IOn/IOff 比为 9.87×109。这项研究揭示了 MoS2 硅片的生长机制,有助于开发基于 MoS2 的电子系统。
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来源期刊
Nanoscale
Nanoscale CHEMISTRY, MULTIDISCIPLINARY-NANOSCIENCE & NANOTECHNOLOGY
CiteScore
12.10
自引率
3.00%
发文量
1628
审稿时长
1.6 months
期刊介绍: Nanoscale is a high-impact international journal, publishing high-quality research across nanoscience and nanotechnology. Nanoscale publishes a full mix of research articles on experimental and theoretical work, including reviews, communications, and full papers.Highly interdisciplinary, this journal appeals to scientists, researchers and professionals interested in nanoscience and nanotechnology, quantum materials and quantum technology, including the areas of physics, chemistry, biology, medicine, materials, energy/environment, information technology, detection science, healthcare and drug discovery, and electronics.
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