Effects of Metal Ions on Sb2Se3 Thin Films and Their Photoelectric Properties

Abstract

Sb₂Se₃ is a new type of semiconductor material with excellent photoelectric properties. However, it suffers from poor carrier transport and separation abilities, significantly hindering its development. Metal-ion doping has been identified as an effective solution to address the low carrier concentration issue in Sb₂Se₃, leading to a substantial increase in the carrier concentration. This study employed a simple, cost-effective hydrothermal method to prepare antimony selenide films and introduced Mg²⁺ conducting ions to enhance the transport and separation abilities of the carriers. The effects of Mg²⁺ metal ions on the phase structure, morphology, and photoelectric properties of antimony selenide films were investigated. The results demonstrate that Mg²⁺ doping promotes the lengthwise growth of antimony selenide rods and facilitates carrier transfer, enabling the efficient separation of photogenerated carriers. Among the different doping levels tested, 0.1 mmol of Mg²⁺ doping exhibited the best photoelectric performance.