A 93.6-dB SNDR Fully Dynamic CT-DT Noise-Shaping SAR ADC With Closed-Loop Capacitively Coupled Two-Stage FIA

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2024-11-06 DOI:10.1109/JSSC.2024.3488364
Lingxin Meng;Shuang Song;Menglian Zhao;Zhichao Tan
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Abstract

This article presents an embedded-friendly high-precision two-step noise-shaping (NS) successive approximation register (SAR) analog-to-digital converter (ADC) designed for sensor applications. By employing a continuous-time (CT) SAR to track the input signal, the design avoids the kT/C noise typically induced by sampling operations. This approach decouples the signal-to-noise ratio (SNR) from the size of the sampling capacitor, thus relaxing the burden of the input and reference buffers. The CT SAR is followed by a two-stage floating-inverter-amplifier (FIA)-based closed-loop residue amplifier (RA) with a 94.6-dB open-loop gain, effectively mitigating interstage gain error. Furthermore, the CT-DT NS SAR exhibits high energy efficiency and fully dynamic characteristics due to the proposed RA and the second-stage DT NS SAR. Fabricated in a 55-nm CMOS process, the prototype achieves a signal-to-noise and distortion ratio (SNDR) of 93.6 dB with only a 120-fF single-ended input capacitor at a signal bandwidth of 5 kHz. Operating at a 1-MHz operating rate, the prototype consumes $34.7~{\mu }$ W from a 1.2-V supply, resulting in a Schreier figure of merit (FoM) of 175.2 dB.
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带有闭环电容耦合两级 FIA 的 93.6 分贝 SNDR 全动态 CT-DT 噪声整形 SAR ADC
本文介绍了一种用于传感器应用的嵌入式友好型高精度两步噪声整形(NS)逐次逼近寄存器(SAR)模数转换器(ADC)。通过采用连续时间(CT) SAR来跟踪输入信号,该设计避免了通常由采样操作引起的kT/C噪声。这种方法将信噪比(SNR)与采样电容的大小解耦,从而减轻了输入和参考缓冲区的负担。CT SAR之后是一个基于两级浮动逆变放大器(FIA)的闭环残留放大器(RA),其开环增益为94.6 db,有效地减轻了级间增益误差。此外,由于所提出的RA和第二级DT NS SAR, CT-DT NS SAR具有高能效和充分的动态特性。该原型采用55 nm CMOS工艺制造,仅使用120-fF单端输入电容,信号带宽为5 kHz,实现了93.6 dB的信噪比和失真比(SNDR)。在1 mhz的工作速率下,该原型从1.2 v电源中消耗34.7~{\mu}$ W,导致Schreier品质系数(FoM)为175.2 dB。
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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