SiCx:H and SiCxNy:H Amorphous Films Prepared from Hexamethyldisilane Vapors

Abstract

Amorphous transparent SiC_x:H and SiC_xN_y:H films are prepared at a temperature of 200 °C and a discharge power of 200 W in an inductively coupled RF plasma reactor using hexamethyldisilane vapors and additional argon and/or nitrogen gases. The influence of N₂ flow rate on the morphology, chemical structure, elemental composition, transmittance, refractive index, contact angle, and film deposition rate is studied. Plasma components are determined by optical emission spectroscopy. It is shown by HRTEM and EDS mapping methods that the annealed Cu/SiC_x:H/Si(100) sample has distinct substrate/film and film/copper layer interfaces, no Cu diffusion occurs, and that the SiC_x:H the film can be considered as a promising diffusion barrier layer. Stability of the films during storage under ambient conditions is studied. The tendency of SiC_xN_y:H films to oxidize is revealed by EDS, IR spectroscopy, and XPS.