Statistical Analysis of Power Semiconductor Devices Lifetime Test and Lifetime Prediction

Abstract

Power semiconductor devices are the core components of power electronic systems and the most fragile part. Power cycling tests (PCTs) and lifetime prediction models are the two main means to obtain the lifetime of semiconductor power devices. This article collected PCT data on silicon (Si) and Si carbide (SiC) semiconductor devices from 2010 to the present. The impacts of different packaging technologies, testing methods, product types, manufacturers, etc. on the lifetime of semiconductor devices are discussed and analyzed. In addition, semiconductor power devices were clarified into three types, normal modules with aluminum (Al) bonding wires and solders, single-improved modules with solder improvement or bonding wire improvement, and double-improved modules with both solder improvement and bonding wire improvement. The lifetime model for each type was fit. Results showed that the fit lifetime prediction formula had high accuracy, with an average multiple of 1.4–2.8 times for the predicted lifetime with the experimental data.