Shahid Atiq;Beom-June Kim;Do-Yeon Eom;Jin-Woo Jung;Minsung Kim
{"title":"High Step-Down Ripple-Free Resonant DC/DC Converter Using Stacked T-Type Half-Bridge","authors":"Shahid Atiq;Beom-June Kim;Do-Yeon Eom;Jin-Woo Jung;Minsung Kim","doi":"10.1109/TPEL.2024.3495772","DOIUrl":null,"url":null,"abstract":"This article presents a high step-down ripple-free resonant dc/dc converter. By incorporating the stacked T-type half-bridge and center-tapped rectifier structure, it achieved high step-down capability without using a high-turns ratio transformer. By using voltage fluctuation across a T-type half-bridge circuit, hard-switched components are turned \n<sc>off</small>\n with nearly zero-voltage-switching. Soft-switching capability realizes high switching frequency operation, which brings down the size of the magnetic components. The interleaved active-clamped circuit and corresponding switching modulation with a duty ratio fixed at 0.5 generate ripple-free output current. This aspect ensures no use of extra filter inductor. The use of secondary-side switching hinders the magnetizing current from flowing through the resonant inductor; the core size of the resonant external inductor can remain compact. As a result, the proposed converter features high-voltage step-down, high efficiency, and ripple-free characteristic. To confirm the viability of the design concept, a 1-kW laboratory built prototype is implemented with the input voltage of 400–600 V and the output voltage of 48 V.","PeriodicalId":13267,"journal":{"name":"IEEE Transactions on Power Electronics","volume":"40 2","pages":"3286-3299"},"PeriodicalIF":6.5000,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Power Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10750305/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This article presents a high step-down ripple-free resonant dc/dc converter. By incorporating the stacked T-type half-bridge and center-tapped rectifier structure, it achieved high step-down capability without using a high-turns ratio transformer. By using voltage fluctuation across a T-type half-bridge circuit, hard-switched components are turned
off
with nearly zero-voltage-switching. Soft-switching capability realizes high switching frequency operation, which brings down the size of the magnetic components. The interleaved active-clamped circuit and corresponding switching modulation with a duty ratio fixed at 0.5 generate ripple-free output current. This aspect ensures no use of extra filter inductor. The use of secondary-side switching hinders the magnetizing current from flowing through the resonant inductor; the core size of the resonant external inductor can remain compact. As a result, the proposed converter features high-voltage step-down, high efficiency, and ripple-free characteristic. To confirm the viability of the design concept, a 1-kW laboratory built prototype is implemented with the input voltage of 400–600 V and the output voltage of 48 V.
期刊介绍:
The IEEE Transactions on Power Electronics journal covers all issues of widespread or generic interest to engineers who work in the field of power electronics. The Journal editors will enforce standards and a review policy equivalent to the IEEE Transactions, and only papers of high technical quality will be accepted. Papers which treat new and novel device, circuit or system issues which are of generic interest to power electronics engineers are published. Papers which are not within the scope of this Journal will be forwarded to the appropriate IEEE Journal or Transactions editors. Examples of papers which would be more appropriately published in other Journals or Transactions include: 1) Papers describing semiconductor or electron device physics. These papers would be more appropriate for the IEEE Transactions on Electron Devices. 2) Papers describing applications in specific areas: e.g., industry, instrumentation, utility power systems, aerospace, industrial electronics, etc. These papers would be more appropriate for the Transactions of the Society which is concerned with these applications. 3) Papers describing magnetic materials and magnetic device physics. These papers would be more appropriate for the IEEE Transactions on Magnetics. 4) Papers on machine theory. These papers would be more appropriate for the IEEE Transactions on Power Systems. While original papers of significant technical content will comprise the major portion of the Journal, tutorial papers and papers of historical value are also reviewed for publication.