Zhongtao Cui;Xuesong Yuan;Xiaotao Xu;Dongrui Chen;Yifan Zu;Matthew Thomas Cole;Qingyun Chen;Yang Yan
{"title":"Theoretical Research on a D-Band Traveling Wave Extended Interaction Amplifier","authors":"Zhongtao Cui;Xuesong Yuan;Xiaotao Xu;Dongrui Chen;Yifan Zu;Matthew Thomas Cole;Qingyun Chen;Yang Yan","doi":"10.23919/cje.2022.00.345","DOIUrl":null,"url":null,"abstract":"A traveling-wave, extended interaction amplifier is herein investigated for use in millimeter-wave and terahertz amplification sources. By placing engineered extended interaction cavities between the traveling wave structures, higher gain is obtained with a shorter high frequency circuit, compared with conventional traveling wave tubes architectures. The bandwidth of the device is significantly increased relative to extended interaction klystrons. A D-band beam wave interaction circuit of 26 mm long has been designed. Particle-in-cell simulations at 21.5-kV operating voltage, 0.3-A beam current, and 5-mW input power show that the maximum output power reaches 351 W, with a gain of 48.4 dB and 3-dB bandwidth of 1.42 GHz.","PeriodicalId":50701,"journal":{"name":"Chinese Journal of Electronics","volume":"33 6","pages":"1487-1491"},"PeriodicalIF":1.6000,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10748542","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chinese Journal of Electronics","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/10748542/","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A traveling-wave, extended interaction amplifier is herein investigated for use in millimeter-wave and terahertz amplification sources. By placing engineered extended interaction cavities between the traveling wave structures, higher gain is obtained with a shorter high frequency circuit, compared with conventional traveling wave tubes architectures. The bandwidth of the device is significantly increased relative to extended interaction klystrons. A D-band beam wave interaction circuit of 26 mm long has been designed. Particle-in-cell simulations at 21.5-kV operating voltage, 0.3-A beam current, and 5-mW input power show that the maximum output power reaches 351 W, with a gain of 48.4 dB and 3-dB bandwidth of 1.42 GHz.
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