{"title":"Solution-Processed Fabrication of Ni<sub>3</sub>S<sub>2</sub>-Based Nanoheterostructure on Silicon Heterojunction Photocathode for Boosting Solar Hydrogen Generation.","authors":"Xiaoming Chen, Yuexiang Li","doi":"10.1002/smtd.202401075","DOIUrl":null,"url":null,"abstract":"<p><p>Silicon heterojunction (SHJ) solar cell is an advanced and mature photovoltaic cell. Development of photoelectrochemical (PEC) water splitting devices for hydrogen fuel production using SHJ solar cells is considered as a promising approach to address energy crisis. To achieve this goal, it is necessary to deposit passivation layer and cocatalyst layer on the photoelectrode. However, the development of low-cost and scalable preparation methods for high-quality passivation and cocatalyst layer continues to be a significant challenge. Herein, an efficient passivation layer and hydrogen evolution reaction (HER) catalyst are successfully fabricated via solution processed methods. To improve the HER activity of Ni<sub>3</sub>S<sub>2</sub>, a Ni<sub>3</sub>S<sub>2</sub>-based nanoheterostructure of crystalline Ni<sub>3</sub>S<sub>2</sub>, Ni, and amorphous Y(OH)<sub>3</sub> is constructed. The optimized photocathode exhibits excellent PEC-HER performance, which achieves a saturated photocurrent of -35.5 mA cm<sup>-2</sup> and an applied bias photon-to-current efficiency (ABPE) of 8.4 ± 0.1% under simulated AM1.5G one-sun illumination and more than 120 h of continuous water splitting. This study paves a way for the design and large-scale manufacturing of cost-efficient SHJ photocathode devices.</p>","PeriodicalId":229,"journal":{"name":"Small Methods","volume":" ","pages":"e2401075"},"PeriodicalIF":10.7000,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Small Methods","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/smtd.202401075","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Silicon heterojunction (SHJ) solar cell is an advanced and mature photovoltaic cell. Development of photoelectrochemical (PEC) water splitting devices for hydrogen fuel production using SHJ solar cells is considered as a promising approach to address energy crisis. To achieve this goal, it is necessary to deposit passivation layer and cocatalyst layer on the photoelectrode. However, the development of low-cost and scalable preparation methods for high-quality passivation and cocatalyst layer continues to be a significant challenge. Herein, an efficient passivation layer and hydrogen evolution reaction (HER) catalyst are successfully fabricated via solution processed methods. To improve the HER activity of Ni3S2, a Ni3S2-based nanoheterostructure of crystalline Ni3S2, Ni, and amorphous Y(OH)3 is constructed. The optimized photocathode exhibits excellent PEC-HER performance, which achieves a saturated photocurrent of -35.5 mA cm-2 and an applied bias photon-to-current efficiency (ABPE) of 8.4 ± 0.1% under simulated AM1.5G one-sun illumination and more than 120 h of continuous water splitting. This study paves a way for the design and large-scale manufacturing of cost-efficient SHJ photocathode devices.
Small MethodsMaterials Science-General Materials Science
CiteScore
17.40
自引率
1.60%
发文量
347
期刊介绍:
Small Methods is a multidisciplinary journal that publishes groundbreaking research on methods relevant to nano- and microscale research. It welcomes contributions from the fields of materials science, biomedical science, chemistry, and physics, showcasing the latest advancements in experimental techniques.
With a notable 2022 Impact Factor of 12.4 (Journal Citation Reports, Clarivate Analytics, 2023), Small Methods is recognized for its significant impact on the scientific community.
The online ISSN for Small Methods is 2366-9608.