Sub-volt forward-biased silicon microring modulator at 210 Gb/s.

Abstract

Low-voltage and efficient optical modulators in the silicon photonic (SiPh) platform are highly desired for realizing high-speed connectivity in chip level interconnects, data center interconnects, and high-performance computing (HPC). With the modulator operating at CMOS compatible voltages, high-voltage modulator drivers are no longer needed, thus reducing driver design complexity and power consumption. We demonstrate a silicon microring modulator (MRM) operating at a driving voltage of 0.8 V_pp. We achieve high modulation efficiency by using a small forward bias of 0.2 V: the forward bias voltage allows the modulator to have an enhanced optical modulation amplitude (OMA) by operating near injection mode, modulating 180 Gb/s (180 Gbaud) non-return-to-zero (NRZ) and 210 Gb/s (105 Gbaud) 4-level pulse amplitude modulation (PAM-4) free of electrical or optical amplification. We also demonstrate the operation at zero bias and achieve up to 200 Gb/s. Error-free operation was observed at 130 Gb/s (NRZ). The absence of an external biasing voltage can further improve energy efficiency and simplifies device integration.