Structural, magnetic and optical characterization of 5 atomic % Fe doped In2O3 dilute magnetic semiconducting nanoparticles

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Science and Engineering B-advanced Functional Solid-state Materials Pub Date : 2024-11-13 DOI:10.1016/j.mseb.2024.117823

Bhakti Pada Das , Tapan Kumar Nath , Sourav Mandal , Ashes Shit , Palash Nandi , Subhasis Shit , Bishnu Chakraborty , Panchanan Pramanik

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Abstract

We present the evidence of high-temperature ferromagnetism and optical behaviour of 5 atomic percent Fe doped In₂O₃ semiconductor. Enhanced transition temperature (927 K) is noticed for ferromagnetic to paramagnetic phase transition in the nanocrystalline material. Understanding of ferromagnetism in (In_0.95Fe_0.05)₂O₃ nanocrystalline material is explained by considering two basic indirect exchange interaction processes, one, in between spins of Fe²⁺ and Fe³⁺ magnetic ions through mediation of oxygen ion vacancy (i.e., Fe²⁺ − (↑) − Fe³⁺), and other, from exchange interaction processes which occurred in between spins of magnetic ions of Fe³⁺- Fe³⁺ or, Fe²⁺- Fe²⁺ through carrier mediation. From our calculation we have estimated the effective paramagnetic moment of (In_0.95Fe_0.05)₂O₃ nanocrystals as 1.62 μ_B / formula unit. The optical band gap energy of (In_0.95Fe_0.05)₂O₃ magnetic semiconductor is evaluated as 3.6 eV.

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掺杂 5 原子%铁的 In2O3 稀磁半导体纳米粒子的结构、磁性和光学特性分析

我们展示了掺杂 5% 铁原子的 In2O3 半导体的高温铁磁性和光学特性。我们注意到这种纳米晶体材料的铁磁性到顺磁性相变的转变温度（927 K）有所提高。对 (In0.95Fe0.05)2O3 纳米晶体材料中铁磁性的理解是通过考虑两个基本的间接交换相互作用过程来解释的，一个是通过氧离子空位（即 Fe2+ - (↑) - Fe3+）的调解在 Fe2+ 和 Fe3+ 磁离子的自旋之间发生的交换相互作用过程，另一个是通过载流子调解在 Fe3+- Fe3+ 或 Fe2+- Fe2+ 磁离子的自旋之间发生的交换相互作用过程。通过计算，我们估计（In0.95Fe0.05）2O3 纳米晶体的有效顺磁矩为 1.62 μB / 式单位。(In0.95Fe0.05)2O3 磁性半导体的光带隙能估计为 3.6 eV。

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来源期刊

Materials Science and Engineering B-advanced Functional Solid-state Materials 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.