Design of On-Chip Multi-Slot Chalcogenide Waveguide for Mid-Infrared Methane Sensing

IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Microwave and Optical Technology Letters Pub Date : 2024-11-15 DOI:10.1002/mop.70036
Ningbo Ma, Zhengkun Qin, Mingquan Pi, Xueying Wang, Chuantao Zheng, Yuting Min, Huan Zhao, Mingxing Song
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Abstract

A chalcogenide (ChG) multi-slot waveguide gas sensor with ChG as the core layer and silicon dioxide (SiO2) as the under-cladding layer is proposed. Multi-slot waveguide can be used in the mid-infrared gas measurement. The optimized power confinement factor (PCF) of the ChG multi-slot waveguide can be up to 41.3%, which is ∼20% higher than that of the optimized single-slot waveguide. At the absorption line located at 3.291 μm for methane (CH4) measurement, the limits of detection (LoD) of single-slot, double-slot, triple-slot, quadruple-slot waveguide sensors are determined to be 68.9, 57.4, 52, 48.6 parts per million (ppm), respectively. Compared with other waveguide sensors in the mid-infrared, the PCF of the proposed multi-slot ChG/SiO2 waveguide sensor is enhanced by five times, which has the potential for highly sensitive gas sensing.

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设计用于中红外甲烷传感的片上多槽卤化铝波导
本文提出了一种以 ChG 为核心层、二氧化硅(SiO2)为下覆层的多槽波导气体传感器。多槽波导可用于中红外气体测量。ChG 多槽波导的优化功率约束因子(PCF)可达 41.3%,比优化的单槽波导高出 20%。在测量甲烷(CH4)的 3.291 μm 吸收线时,单槽、双槽、三槽、四槽波导传感器的检测限(LoD)分别为 68.9、57.4、52、48.6 ppm。与其他中红外波导传感器相比,所提出的多槽 ChG/SiO2 波导传感器的 PCF 增强了五倍,具有高灵敏度气体传感的潜力。
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来源期刊
Microwave and Optical Technology Letters
Microwave and Optical Technology Letters 工程技术-工程:电子与电气
CiteScore
3.40
自引率
20.00%
发文量
371
审稿时长
4.3 months
期刊介绍: Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas. - RF, Microwave, and Millimeter Waves - Antennas and Propagation - Submillimeter-Wave and Infrared Technology - Optical Engineering All papers are subject to peer review before publication
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