Photoelectrochemical Hydrogen Production from Water Using Copper-based Chalcopyrite Thin Films

IF 3.5 4区 化学 Q2 ELECTROCHEMISTRY ChemElectroChem Pub Date : 2024-10-21 DOI:10.1002/celc.202400365
Shigeru Ikeda, Shogo Ishizuka
{"title":"Photoelectrochemical Hydrogen Production from Water Using Copper-based Chalcopyrite Thin Films","authors":"Shigeru Ikeda,&nbsp;Shogo Ishizuka","doi":"10.1002/celc.202400365","DOIUrl":null,"url":null,"abstract":"<p>Copper (Cu)-based chalcopyrite compounds are promising photoabsorber materials not only for solar cells but also for photoelectrochemical (PEC) systems for conversion of sunlight energy into chemical energy. PEC water splitting to generate hydrogen (H<sub>2</sub>) is one of the most advanced technologies in a PEC system for the use of Cu-based chalcopyrite compounds. In this review, we firstly introduce crystallographic/energetic structures of Cu-based chalcopyrite compounds in view of their applications to PEC water splitting. Explanations for the operation of PEC water splitting using semiconductor materials are then overviewed. Based on these backgrounds, studies on PEC H<sub>2</sub> evolution over photocathodes based on CuInS<sub>2</sub> and CuGaSe<sub>2</sub> thin films that we have developed are reviewed in detail. For realizing efficient PEC H<sub>2</sub> evolution over these thin films, surface modifications with an n-type layer such as CdS and a catalytic site such as Pt deposit were found to be indispensable. Precise controls of p-n heterointerfaces formed by introducing an n-type layer should also be required to enhance PEC performance. Although PEC water splitting has not reached the required efficiency to be useful, effective combinations of appropriate surface and interface modifications should lead to further improvements of properties to be close to practical applications.</p>","PeriodicalId":142,"journal":{"name":"ChemElectroChem","volume":"11 21","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/celc.202400365","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ChemElectroChem","FirstCategoryId":"92","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/celc.202400365","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ELECTROCHEMISTRY","Score":null,"Total":0}
引用次数: 0

Abstract

Copper (Cu)-based chalcopyrite compounds are promising photoabsorber materials not only for solar cells but also for photoelectrochemical (PEC) systems for conversion of sunlight energy into chemical energy. PEC water splitting to generate hydrogen (H2) is one of the most advanced technologies in a PEC system for the use of Cu-based chalcopyrite compounds. In this review, we firstly introduce crystallographic/energetic structures of Cu-based chalcopyrite compounds in view of their applications to PEC water splitting. Explanations for the operation of PEC water splitting using semiconductor materials are then overviewed. Based on these backgrounds, studies on PEC H2 evolution over photocathodes based on CuInS2 and CuGaSe2 thin films that we have developed are reviewed in detail. For realizing efficient PEC H2 evolution over these thin films, surface modifications with an n-type layer such as CdS and a catalytic site such as Pt deposit were found to be indispensable. Precise controls of p-n heterointerfaces formed by introducing an n-type layer should also be required to enhance PEC performance. Although PEC water splitting has not reached the required efficiency to be useful, effective combinations of appropriate surface and interface modifications should lead to further improvements of properties to be close to practical applications.

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利用铜基黄铜矿薄膜光电化学法从水中制氢
铜(Cu)基黄铜矿化合物是一种前景广阔的光吸收材料,不仅可用于太阳能电池,还可用于将太阳光能转化为化学能的光电化学(PEC)系统。在使用铜基黄铜矿化合物的 PEC 系统中,PEC 水分离产生氢气(H2)是最先进的技术之一。在这篇综述中,我们首先介绍了铜基黄铜矿化合物的晶体学/能量结构,以便将其应用于 PEC 水分裂。然后概述了利用半导体材料进行 PEC 水分离的操作原理。基于这些背景,我们详细回顾了基于 CuInS2 和 CuGaSe2 薄膜的光电阴极 PEC H2 演化研究。研究发现,要在这些薄膜上实现高效的 PEC H2 演化,CdS 等 n 型层和铂沉积物等催化位点的表面修饰是必不可少的。此外,还需要精确控制通过引入 n 型层形成的 p-n 异质界面,以提高 PEC 性能。虽然 PEC 水分离尚未达到所需的效率,但适当的表面和界面改性的有效组合应能进一步提高性能,从而接近实际应用。
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来源期刊
ChemElectroChem
ChemElectroChem ELECTROCHEMISTRY-
CiteScore
7.90
自引率
2.50%
发文量
515
审稿时长
1.2 months
期刊介绍: ChemElectroChem is aimed to become a top-ranking electrochemistry journal for primary research papers and critical secondary information from authors across the world. The journal covers the entire scope of pure and applied electrochemistry, the latter encompassing (among others) energy applications, electrochemistry at interfaces (including surfaces), photoelectrochemistry and bioelectrochemistry.
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