Broadband Harmonic-Assisted Power and Efficiency Enhancement in a 174–232-GHz SiGe Voltage-Controlled Oscillator

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2024-11-19 DOI:10.1109/JSSC.2024.3494538
Hamidreza Aghasi;Xuyang Liu;Morteza Tavakolli Taba;Amirata Tabatabavakili;Ehsan Afshari
{"title":"Broadband Harmonic-Assisted Power and Efficiency Enhancement in a 174–232-GHz SiGe Voltage-Controlled Oscillator","authors":"Hamidreza Aghasi;Xuyang Liu;Morteza Tavakolli Taba;Amirata Tabatabavakili;Ehsan Afshari","doi":"10.1109/JSSC.2024.3494538","DOIUrl":null,"url":null,"abstract":"This article presents a wideband sub-THz Colpitts voltage-controlled oscillator (VCO) with a novel harmonic-assisted technique to enhance power efficiency across a large tuning range. We first show how the proposed oscillator architecture operates compared to conventional Colpitts oscillators and present the efficiency enhancement techniques. Furthermore, we demonstrate a harmonic-based adjustment of power efficiency using a variable impedance at the device embedding network. We also evaluate the effect of the harmonic-assisted operation on the phase noise of the oscillator through the comparison of simulation and measurement results. The circuit is fabricated in a 55-nm SiGe BiCMOS technology occupying a compact area of 0.29 mm<sup>2</sup>. A 174–232-GHz oscillation bandwidth (28.6%) is achieved with a peak output power of −0.4 dBm and 2.9% peak dc-to-RF efficiency while the power variation across the tuning range is 5.8 dB and a 41-GHz 3-dB bandwidth of output power is achieved. The best-measured phase noise is −100 dBc/Hz at the 10-MHz offset.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 6","pages":"1921-1931"},"PeriodicalIF":5.6000,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Solid-state Circuits","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10758425/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This article presents a wideband sub-THz Colpitts voltage-controlled oscillator (VCO) with a novel harmonic-assisted technique to enhance power efficiency across a large tuning range. We first show how the proposed oscillator architecture operates compared to conventional Colpitts oscillators and present the efficiency enhancement techniques. Furthermore, we demonstrate a harmonic-based adjustment of power efficiency using a variable impedance at the device embedding network. We also evaluate the effect of the harmonic-assisted operation on the phase noise of the oscillator through the comparison of simulation and measurement results. The circuit is fabricated in a 55-nm SiGe BiCMOS technology occupying a compact area of 0.29 mm2. A 174–232-GHz oscillation bandwidth (28.6%) is achieved with a peak output power of −0.4 dBm and 2.9% peak dc-to-RF efficiency while the power variation across the tuning range is 5.8 dB and a 41-GHz 3-dB bandwidth of output power is achieved. The best-measured phase noise is −100 dBc/Hz at the 10-MHz offset.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
174-232-GHz SiGe 电压控制振荡器的宽带谐波辅助功率和效率提升
本文提出了一种宽带次太赫兹柯氏压控振荡器(VCO),该振荡器采用一种新颖的谐波辅助技术,可在大调谐范围内提高功率效率。我们首先展示了与传统的Colpitts振荡器相比,所提出的振荡器结构是如何工作的,并提出了提高效率的技术。此外,我们演示了在器件嵌入网络中使用可变阻抗的基于谐波的功率效率调整。通过仿真和测量结果的对比,评价了谐波辅助操作对振荡器相位噪声的影响。该电路采用55纳米SiGe BiCMOS技术制造,占用0.29 mm2的紧凑面积。在- 0.4 dBm的峰值输出功率和2.9%的峰值dc- rf效率下,实现了174 - 232 ghz的振荡带宽(28.6%),而在整个调谐范围内的功率变化为5.8 dB,实现了41-GHz的3db的输出功率带宽。在10mhz偏移时,最佳相位噪声测量值为- 100dbc /Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
期刊最新文献
A 6.78-MHz Single-Stage Regulating Rectifier With Dual Outputs Simultaneously Charged in a Half Cycle Achieving 92.2% Efficiency and 131 mW Output Power A 95.3% Efficiency APT/AET/SPT Multimode Multiband CMOS/GaN Envelope Tracking for 6G-Oriented Systems A 0.4-V 988-nW Tiny Footprint Time-Domain Audio Feature Extraction ASIC for Keyword Spotting Using Injection-Locked Oscillators Self-Enabled Write Assist Cells for High-Density SRAM in Resistance-Dominated Technology Node A 3nm Fin-FET 19.87-Mbit/mm 2 2RW Pseudo Dual-Port 6T SRAM With Metal Wire-R Tracking and Sequential Access-Aware Dynamic Power Reduction
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1