Recent advances in plasma etching for micro and nano fabrication of silicon-based materials: a review

IF 5.7 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Journal of Materials Chemistry C Pub Date : 2024-10-30 DOI:10.1039/D4TC00612G
Chaojiang Li, Yuxin Yang, Rui Qu, Xun Cao, Guodong Liu, Xin Jin, Yuxuan Liu, Shenggui Liu, Wang Jiang and Xianchao Zhang
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Abstract

The demands for precision machining of silicon-based materials are growing in various modern applications, including micro-electro-mechanical systems (MEMS), micromotors, sensors, bioelectronics, medical implants, and microfluidic devices. Towards the miniaturization and high-precision trends, it is essential to explore recent advancements in plasma etching of silicon-based materials. This review aims to provide a comprehensive review of the latest advancements in plasma etching for micro and nanofabrication of silicon-based materials, including silicon, silicon dioxide, silicon carbide, silicon nitride, and silicon germanium. The review begins by addressing etching mechanisms, simulation methods, and recent novel approaches and enhancements in plasma etching. Subsequently, separate sections are dedicated to discussing commonly utilized chemistries, process routes, and processing parameters specific to each type of silicon-based material during plasma etching. Subsequently, functional structures such as micropillar arrays, high-aspect-ratio holes and nanowires formed through plasma etching alongside their applications across various fields are summarized. In the end, current research trends and future prospects in plasma etching for micro and nanofabrication of silicon-based materials are discussed. This review article seeks to address both the academic and industrial audience thereby leading to further innovations for plasma etching of silicon-based materials.

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用于硅基材料微米和纳米制造的等离子刻蚀技术的最新进展:综述
在微机电系统 (MEMS)、微电机、传感器、生物电子学、医疗植入物和微流控设备等各种现代应用中,对硅基材料精密加工的需求与日俱增。为了适应微型化和高精度化的发展趋势,有必要探讨硅基材料等离子刻蚀技术的最新进展。本综述旨在全面评述用于硅基材料(包括硅、二氧化硅、碳化硅、氮化硅和硅锗)微纳米制造的等离子刻蚀技术的最新进展。综述首先介绍了蚀刻机理、模拟方法以及等离子体蚀刻的最新方法和改进。随后,分别讨论了在等离子刻蚀过程中针对每种硅基材料常用的化学方法、工艺路线和加工参数。随后,总结了通过等离子刻蚀形成的微柱阵列、高纵横比孔和纳米线等功能结构及其在各个领域的应用。最后,还讨论了等离子刻蚀在硅基材料的微米和纳米加工中的当前研究趋势和未来展望。这篇综述文章旨在面向学术界和工业界读者,从而推动硅基材料等离子刻蚀技术的进一步创新。
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来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
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